48 results on '"la Via, F"'
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2. Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
3. The NUMEN project @ LNS: Status and perspectives
4. A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
5. Mechanisms of growth and defect properties of epitaxial SiC
6. Microtwin reduction in 3C–SiC heteroepitaxy
7. Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates
8. Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films
9. Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates
10. Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si
11. Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes
12. Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins
13. Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition
14. Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
15. Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films
16. Drift mobility in 4H-SiC Schottky diodes
17. Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier
18. Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
19. Influence of defects on the kinetic of C49–C54 TiSi2 transformation
20. Structural and electrical properties of Ni∕Ti Schottky contacts on silicon carbide upon thermal annealing
21. Investigations of transient phase formation in Ti/Si thin film reaction
22. C49-C54 phase transition in nanometric titanium disilicide grains
23. Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films
24. Temperature dependence of the c-axis mobility in 6H-SiC Schottky diodes
25. High-resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition
26. Electrical resistivity and Hall coefficient of C49, C40, and C54 TiSi2 thin-film phases
27. Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure
28. “Direct” measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy
29. Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface
30. Thermal oxidation of Si (001) single crystal implanted with Ge ions
31. Improvement of CoSi2 thermal stability by cavity formation
32. In situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49–C54 transformation
33. Formation of the TiSi2 C40 as an intermediate phase during the reaction of the Si/Ta/Ti system
34. Simulation of the transformation from the C49 to the C54 phase of TiSi2 in blanket films and narrow conductors
35. Defect-induced tetragonalization of the orthorhombic TiSi2 C49 phase: X-ray diffraction and first principles calculations
36. Nucleation and growth of C54 grains into C49 TiSi2 thin films monitored by micro-Raman imaging
37. Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate
38. Thermal stability of cobalt silicide stripes on Si (001)
39. Effect of the linewidth reduction on the characteristic time spread in C49–C54 phase transition
40. Precipitation of As in thermally oxidized ion-implanted Si crystals
41. High temperature annealing effects on the electrical characteristics of C implanted Si
42. Characterization of C coimplanted GexSi1−xepitaxial layers formed by high dose Ge ion implantation in (100) Si
43. Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide
44. Boron diffusion in Co74Ti26amorphous alloy
45. Precipitation of arsenic diffused into silicon from a TiSi2source
46. Titanium silicide as a diffusion source for arsenic
47. Defect-induced tetragonalization of the orthorhombic TiSi2 C49 phase: X-ray diffraction and first principles calculations
48. Precipitation of As in thermally oxidized ion-implanted Si crystals
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