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We have determined the write power density dependence on heating pulse width and antiferromagnet (AF) thickness using magnetic tunnel junctions whose storage layer is exchange biased with IrMn or FeMn. An increase in write power density needed to write the storage layer has been observed for both AF as pulse width is decreased from 0.1 ms to 10 ns. Quasistatic blocking temperatures (Tb) were measured on both full sheet and patterned samples, showing a reduction in Tb for patterned samples which we link to process induced damages. Power-temperature relationship was established based on a correspondence between writing power for long pulse duration and quasistatic Tb measurement. Both write power density and associated temperature results show a dependence of the Tb on AF thickness at pulse width as short as 10 ns. Particularly for IrMn, the relationship between write power and pulse width becomes weakly dependent on the AF thickness above a certain AF thickness. The write power density is significantly low...

The evolution of the perpendicular magnetic anisotropy of Pt/Co/AlOx structures has been followed by extraordinary Hall Effect measurements as a function of both Al thickness and annealing treatment. A nonmonotonous evolution of the magnetic anisotropy is observed with increasing aluminum thickness, with a maximum around 1.4 nm attributed to the formation of quantum well states in the remaining metallic Al layer. This maximum gradually disappears after annealing. High resolution electron microscopy images indicate that the vanishing of this maximum is associated with homogenization of oxygen throughout the whole Al layer.