1. Investigation of neutralized (NH4)2S solution passivation of GaAs (100) surfaces
- Author
-
X. Y. Miao, J. S. Yang, Xi-ying Chen, H. T. Hu, Z. S. Li, Xian-An Cao, X.M. Ding, Z. L. Yuan, E. D. Lu, P. S. Xu, S. H. Xu, Xuan Zhang, and Xiaoyuan Hou
- Subjects
chemistry.chemical_classification ,chemistry.chemical_compound ,Physics and Astronomy (miscellaneous) ,Passivation ,Sulfide ,Chemistry ,Scanning electron microscope ,Etching (microfabrication) ,Analytical chemistry ,Gravimetric analysis ,Wafer ,Layer (electronics) ,Gallium arsenide - Abstract
Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface.
- Published
- 1997