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2 results on '"Véronique Bardinal"'

1. Four‐wave mixing in bulk GaAs microcavities at room temperature

Author

M. Hübner, J. Kuhl, Véronique Bardinal, R. Buhleier, J.H. Collet, and Chantal Fontaine

Subjects
Diffraction, Materials science, Physics and Astronomy (miscellaneous), Condensed Matter::Other, business.industry, Physics::Optics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Diffraction efficiency, Condensed Matter::Materials Science, Four-wave mixing, Wavelength, Finesse, Femtosecond, Optoelectronics, business, Diffraction grating, Order of magnitude
Abstract

We studied pico‐ and femtosecond degenerate four‐wave mixing in bulk GaAs Fabry–Perot microcavities at room temperature. For wavelengths below the GaAs band edge, a cavity with a finesse of approximately 20 yields an enhancement of the diffracted signal by more than two orders of magnitude as compared to a cavityless GaAs layer of the same thickness (685 nm). The cavity‐enhanced nonlinearity of the interband transition results in a diffraction efficiency η≊0.5% for 150 pJ pulses with a duration of 900 fs at 878 nm, being 400 times larger than that for the bare GaAs reference sample.

Published
1996

2. Precision Bragg reflectors obtained by molecular beam epitaxy under in situ tunable dynamic reflectometry control

Author

R. Legros, Véronique Bardinal, Chantal Fontaine, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J), Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), and Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Fabrication, Materials science, Physics and Astronomy (miscellaneous), Physics::Optics, Synchronizing, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Condensed Matter::Materials Science, Optics, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Reflectometry, 010302 applied physics, business.industry, Bragg's law, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

International audience; Highly accurate layer thicknesses are required for multilayers involved in photonic devices, such as Bragg reflectors. In this letter, we demonstrate that precise, real-time monitoring of molecular beam epitaxy growing layers can be achieved by near-normal incidence dynamic reflectometry with a tunable sapphire-titanium laser used as a source. The advantage of this new technique lies in the possibility of synchronizing the material changes and the reflectivity extrema by selecting adequate analysis wavelengths. This technique is shown to provide 885 nm GaAs-AlAs Bragg reflectors with a layer thickness accuracy in excess of 1%.

Published
1995

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