19 results on '"Timm, R."'
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2. GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy
3. Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy
4. Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
5. Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
6. Doping profile of InP nanowires directly imaged by photoemission electron microscopy
7. Interface composition of InAs nanowires with Al2O3 and HfO2 thin films
8. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
9. Formation of InAs/InGaAsP quantum-dashes on InP(001)
10. Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures
11. Change of InAs/GaAs quantum dot shape and composition during capping
12. Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix
13. Structure and intermixing of GaSb∕GaAs quantum dots
14. Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy
15. Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix
16. Parallel epitaxy of TiN(100) thin films on Si(100) produced by pulsed reactive crossed-beam laser ablation
17. Reactive crossed beam scattering of a Ti plasma and a N2 pulse in a novel laser ablation method
18. Ablation and blow-off characteristics at 248 nm of Al, Sn and Ti targets used for thin film pulsed laser deposition
19. Growth of CuO films by pulsed laser deposition in conjunction with a pulsed oxidation source
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