262 results on '"Ren, F."'
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2. Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3
3. A self-aligned Ga2O3 heterojunction barrier Schottky power diode
4. Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes
5. Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth
6. Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
7. Extremely low thermal conductivity of β−Ga2O3 with porous structure
8. Strain-driven phase manipulation of α- and κ-Ga2O3 by nanoepitaxial lateral overgrowth on embedded α-In2O3 submicron dots
9. A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction
10. In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction
11. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
12. Experimental estimation of electron–hole pair creation energy inβ -Ga2O3
13. Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation
14. Misfit epitaxial strain manipulated transport properties in cubic In2O3 hetero-epilayers
15. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
16. Selective trapping of positrons by Ag nanolayers in a V/Ag multilayer system
17. Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface
18. Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra
19. Defects at the surface of β-Ga2O3 produced by Ar plasma exposure
20. Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions
21. Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3
22. Swift heavy ion irradiation to ZnO nanoparticles: Steep degradation at low fluences and stable tolerance at high fluences
23. Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si
24. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
25. Ga2O3Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2figure-of-merit
26. Effects of fluorine incorporation into β-Ga2O3
27. A review of Ga2O3materials, processing, and devices
28. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
29. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
30. Energy band offsets of dielectrics on InGaZnO4
31. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
32. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes
33. Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
34. Erratum: “Enhanced and polarization dependence of surface-enhanced Raman scattering in silver nanoparticle array-nanowire systems” [Appl. Phys. Lett. 102, 163108 (2013)]
35. Formation of TiO2nanorods by ion irradiation
36. Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes
37. Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
38. Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor
39. Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors
40. Enhanced and polarization dependence of surface-enhanced Raman scattering in silver nanoparticle array-nanowire systems
41. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
42. Novel doping for synthesis monodispersed TiO2 grains filled into spindle-like hematite bi-component nanoparticles by ion implantation
43. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors
44. Origin of white light luminescence from Si+/C+ sequentially implanted and annealed silica
45. Effects of P implantation and post-implantation annealing on defect formation in ZnO
46. Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies
47. Oxygen sensors made by monolayer graphene under room temperature
48. Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors
49. Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)]
50. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy
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