75 results on '"Pollak, Fred H."'
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2. Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se
3. Contactless electroreflectance, in the range of 20 K<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy
4. Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films
5. Optical constants of In0.53Ga0.47As/InP: Experiment and modeling
6. Thermal conductivity of GaN films: Effects of impurities and dislocations
7. Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure
8. Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure
9. Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure
10. Ion-beam processing effects on the thermal conductivity ofn-GaN/sapphire (0001)
11. High spatial resolution thermal conductivity of bulk ZnO (0001)
12. Effect of dislocations on thermal conductivity of GaN layers
13. Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
14. Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence
15. Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure
16. Comment on “Photoreflectance study in the E1 and E1+Δ1 transition regions of CdTe” [J. Appl. Phys. 87, 7360 (2000)]
17. Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice
18. High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
19. Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
20. Response to “Comment on ‘Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling’ ” [J. Appl. Phys. 88, 2172 (2000)]
21. Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence
22. Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling
23. High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope
24. Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy
25. Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
26. Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling
27. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition
28. Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
29. Characterization of InGaAsP/InP p-i-n solar cell structures using modulation spectroscopy and secondary ion mass spectrometry
30. Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope
31. Franz–Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures
32. Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH) laser structure using contactless electroreflectance
33. Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor
34. Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures
35. On the origins of the Franz–Keldysh oscillations observed in the electromodulation spectra of graded emitter Ga1−xAlxAs/GaAs heterojunction bipolar transistor structures
36. Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance
37. Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well
38. Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure
39. Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch
40. Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure
41. Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser
42. Micro-Raman study of diamondlike atomic-scale composite films modified by continuous wave laser annealing
43. Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001)
44. Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures
45. Scanning tunneling microscopy of diamond‐like nanocomposite films
46. Air stabilized (001)p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density
47. A new offset technique for suppression of spurious signals in photoreflectance spectra
48. Characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots using room-temperature photoreflectance
49. Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
50. Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure
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