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38 results on '"Pizzini, S"'

10. Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

Author

Novikov, P. L., primary, Le Donne, A., additional, Cereda, S., additional, Miglio, Leo, additional, Pizzini, S., additional, Binetti, S., additional, Rondanini, M., additional, Cavallotti, C., additional, Chrastina, D., additional, Moiseev, T., additional, von Känel, H., additional, Isella, G., additional, and Montalenti, F., additional

Published
2009
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35. Time-resolved magnetic domain imaging by x-ray photoemission electron microscopy

Author

Stefania Pizzini, Marlio Bonfim, A. Fontaine, Wolfgang Kuch, Keiki Fukumoto, Julio Camarero, Jan Vogel, J. Kirschner, Yan Pennec, Francesco Offi, Vogel, J, Kuch, W, Bonfim, M, Camarero, J, Pennec, Y, Offi, Francesco, Fukumoto, K, Kirschner, J, Fontaine, A, and Pizzini, S.

Subjects
Permalloy, Photon, Materials science, Physics and Astronomy (miscellaneous), Magnetic domain, business.industry, Nucleation, Nanosecond, Microcoil, Synchrotron, law.invention, Photoemission electron microscopy, Nuclear magnetic resonance, law, Optoelectronics, business
Abstract

X-ray photoemission electron microscopy (X-PEEM) is a powerful imaging technique that can be used to perform element selective magnetic domain imaging on heterogeneous samples with different magnetic layers, like spin valves and tunnel junctions. We have performed nanosecond time-resolved X-PEEM measurements, on the permalloy layer of a Ni80Fe20 (5 nm)/Cu (10 nm)/Co (5 nm) trilayer deposited on Si(111). We used the pump-probe mode, synchronizing a magnetic pulse from a microcoil with the x-ray photon bunches delivered by the BESSY synchrotron in single bunch mode. Images could be acquired during and after the 20 ns long and 80 Oe high field pulses. The nucleation and subsequent growth of reversed domains in the permalloy could be observed, demonstrating the feasibility of element selective and time-resolved domain imaging using X-PEEM.

Published
2003

36. Optical properties of shuffle dislocations in silicon

Author

A. Marzegalli, J. Rabier, Simona Binetti, A. Le Donne, Sergio Pizzini, Pizzini, S, Binetti, S, LE DONNE, A, Marzegalli, A, and Rabier, J

Subjects
Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), Condensed matter physics, Field (physics), Silicon, business.industry, dislocation, silicon, chemistry.chemical_element, Float-zone silicon, Crystallographic defect, CHIM/02 - CHIMICA FISICA, Condensed Matter::Materials Science, Molecular dynamics, Optics, chemistry, Spontaneous emission, business, Spectroscopy
Abstract

The radiative recombination processes in dislocated float zone silicon samples deformed under gigapascal stresses were studied by photoluminescence (PL) spectroscopy. The observed shuffle dislocations present a reconstructed core and their generation is accompanied by the introduction of point defects and point defect clusters, whose signature is evident in the PL spectra. A broad band around 1 eV is the only PL feature which could be directly related to shuffle dislocations and it is explained conjecturing strain field induced gap changes, as confirmed by molecular dynamics simulations. (c) 2006 American Institute of Physics.

Published
2006

37. Electronic transitions at defect states in Cz p-type silicon

Author

Sergio Pizzini, Daniela Cavalcoli, Anna Cavallini, Simona Binetti, Antonio Castaldini, Castaldini, A, Cavalcoli, D, Cavallini, A, Binetti, S, Pizzini, S, A. CASTALDINI, CAVALCOLI D., A. CAVALLINI, S. BINETTI, and S. PIZZINI

Subjects
Photoluminescence, Materials science, Deep-level transient spectroscopy, Physics and Astronomy (miscellaneous), Silicon, Precipitation (chemistry), chemistry.chemical_element, Oxygen, Molecular physics, silicon , oxygen precipitates, DLTS, CHIM/02 - CHIMICA FISICA, Crystallography, chemistry, Transition metal, Impurity, Atomic electron transition, FIS/03 - FISICA DELLA MATERIA
Abstract

Point and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials (oxygen precipitated and/or deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen precipitation, plastic deformation, and metallic contamination on the radiative and nonradiative electronic transitions at defect centers. A deep hole trap, named T1, has been associated with dislocation-related impurity centers; additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms. © 2005 American Institute of Physics.

Published
2005

38. Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon

Author

Simona Binetti, Sergio Pizzini, Alessia Le Donne, Vadim V. Emtsev, Binetti, S, LE DONNE, A, Emtsev, V, and Pizzini, S

Subjects
Materials science, Photoluminescence, Silicon, Dopant, Annealing (metallurgy), Silicon dioxide, Doping, Analytical chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Mineralogy, thermal donors, high pressure, silicon, Oxygen, CHIM/02 - CHIMICA FISICA, chemistry.chemical_compound, chemistry
Abstract

The effect of single-step annealing at 450, 650, and 1000degreesC under gigapascal hydrostatic pressures on oxygen segregation from Czochralski silicon samples was investigated. It was shown that the effect of applied pressure on the oxygen segregation processes begins to be detectable at 650degreesC and significant at 1000degreesC. Not only was the effect of the applied pressure clearly evidenced, but also that of the dopants. In the first case the presence of a gap level associated to self-interstitial clusters could be argued, whereas in the second case both the oxide particles segregation and the dislocation formation were demonstrated to be enhanced by the pressure and by the type of doping. Furthermore, visible and ultraviolet photoluminescence emission at cryogenic temperatures were observed from silicon dioxide particles or from oxide nuclei contained in the silicon matrix. (C) 2003 American Institute of Physics.

Published
2003

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