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1. Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

2. Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method

3. Two inch diameter, highly conducting bulkβ -Ga2O3 single crystals grown by the Czochralski method

4. Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy

5. Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

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