1. Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications
- Author
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Lei Zhang, Peizhuan Chen, Pingjuan Niu, Jianxin Zhang, Minghui Song, Pingfan Ning, and Yuqiang Li
- Subjects
010302 applied physics ,Materials science ,business.industry ,Triple junction ,Energy conversion efficiency ,General Physics and Astronomy ,02 engineering and technology ,Chemical vapor deposition ,Radiation ,021001 nanoscience & nanotechnology ,Space (mathematics) ,01 natural sciences ,lcsh:QC1-999 ,0103 physical sciences ,Optoelectronics ,Quantum efficiency ,0210 nano-technology ,business ,lcsh:Physics ,Voltage - Abstract
Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm2 area under the AM0 spectrum at 25 °C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%.
- Published
- 2017
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