28 results on '"Park, Youngsoo"'
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2. Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes
3. Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method
4. Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
5. Optical lattices of InGaN quantum well excitons
6. Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
7. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
8. Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
9. Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
10. Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
11. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
12. High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
13. Effect of Ga∕In ratio on the optical and electrical properties of GaInZnO thin films grown on SiO2∕Si substrates
14. Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control
15. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
16. High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory
17. Effect of hydrogenation on the memory properties of Si nanocrystals obtained by inductively coupled plasma chemical vapor deposition
18. Pd-nanocrystal-based nonvolatile memory structures with asymmetric SiO2∕HfO2 tunnel barrier
19. Multibit memories using a structure of SiO2/partially oxidized amorphous Si∕HfO2
20. Improvement of retention loss in Pb(Zr,Ti)O3 capacitors using Ir∕SrRuO3 top electrodes
21. Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure
22. Investigation of hydrogen-induced degradation in Pb(ZrxTi1−x)O3 thin film capacitors for the application of memory devices
23. Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition
24. Effect of water absorption on the residual stress in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition
25. Delamination behavior of Pt in a SiO2/Pt/Pb(ZrxTi1−x)O3/Pt ferroelectric thin-film capacitor
26. Evolution of residual stress in plasma-enhanced chemical-vapor-deposited silicon dioxide film exposed to room air
27. Improvement in the electrical properties in Pt/Pb(Zr0.52Ti0.48)O3/Pt ferroelectric capacitors using a wet cleaning method
28. Deposition-temperature-dependent stress of capping oxide and its effect on Pt/Pb(Zr1−xTix)O3/Pt ferroelectric capacitor
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