34 results on '"Park, Y.‐J."'
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2. Investigation of thermal and electrical stabilities of a GdBCO coil using grease as an insulation material for practical superconducting applications
3. Radially dependent effective piezoelectric coefficient and enhanced piezoelectric potential due to geometrical stress confinement in ZnO nanowires/nanotubes
4. Stress-relaxed growth of n-GaN epilayers
5. Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs
6. Characteristics of long wavelength InGaN quantum well laser diodes
7. Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
8. Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers
9. Clarification of Mn–Zn interaction for InMnP:Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy
10. Highly stable temperature characteristics of InGaN blue laser diodes
11. 1060nm vertical-external-cavity surface-emitting lasers with an optical-to-optical efficiency of 44% at room temperature
12. Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1−xLax)4Ti3O12 films for ferroelectric memories
13. Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy
14. Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2∕Si substrates by sputtering method
15. Spectroscopic characterization of 1.3μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy
16. Retention properties of fully integrated (Bi,La)4Ti3O12 capacitors and their lateral size effects
17. Optical and magnetic properties of Mn+-implanted GaAs
18. Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy
19. Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices
20. Mn-implanted dilute magnetic semiconductor InP:Mn
21. Ferromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions
22. 160-A bulk GaN Schottky diode array
23. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
24. Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
25. Triode-type field emission array using carbon nanotubes and a conducting polymer composite prepared by electrochemical polymerization
26. Carbon nanotube electron emitters with a gated structure using backside exposure processes
27. Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation
28. Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs
29. High-density transition layer in oxynitride interfaces on Si(100)
30. Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study
31. Reinvestigation and extension of the steady‐state Nyquist theorem for multi‐terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors
32. PLS bending magnet x‐ray beamline 3C2
33. Steady‐state Nyquist theorem for multi‐terminal nondegenerate semiconductor devices
34. Equivalent noise source for Boltzmann transport equation with relaxation‐time approximation in nondegenerate semiconductors
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