16 results on '"Ohdomari, I."'
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2. Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation
3. Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification
4. Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation
5. Lateral migration of point defects in Si induced by localized ion implantation
6. Three-dimensional site dependence of single-ion-induced charge collection at a p-n junction—role of funneling and diffusion processes under different ion energy
7. Microstructure and Schottky barrier height of iridium silicides formed on silicon
8. Investigation of thin‐film Ni/single‐crystal SiC interface reaction
9. Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide
10. Parallel silicide contacts
11. Redistribution of As during Pd2Si formation: Ion channeling measurements
12. Low‐temperature redistribution of As in Si during Pd2Si formation
13. Schottky‐barrier height of iridium silicide
14. Formation of iridium silicides from Ir thin films on Si substrates
15. Reduction of contact resistivity by As redistribution during Pd2Si formation
16. Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering
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