52 results on '"Mita, Seiji"'
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2. High p-conductivity in AlGaN enabled by polarization field engineering
3. High conductivity in Ge-doped AlN achieved by a non-equilibrium process
4. High conductivity and low activation energy in p-type AlGaN
5. High electron mobility in AlN:Si by point and extended defect management
6. On the conduction mechanism in compositionally graded AlGaN
7. Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
8. Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
9. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
10. Doping and compensation in heavily Mg doped Al-rich AlGaN films
11. The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
12. A pathway to highly conducting Ge-doped AlGaN
13. Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
14. On the Ge shallow-to-deep level transition in Al-rich AlGaN
15. Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
16. High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
17. Weak localization and dimensional crossover in compositionally graded AlxGa1−xN
18. Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
19. High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
20. Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
21. The nature of the DX state in Ge-doped AlGaN
22. Shallow Si donor in ion-implanted homoepitaxial AlN
23. Recovery kinetics in high temperature annealed AlN heteroepitaxial films
24. The role of chemical potential in compensation control in Si:AlGaN
25. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
26. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
27. Design of AlGaN-based quantum structures for low threshold UVC lasers
28. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
29. The role of transient surface morphology on composition control in AlGaN layers and wells
30. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
31. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
32. Probing collective oscillation ofd-orbital electrons at the nanoscale
33. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
34. Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers
35. High free carrier concentration in p-GaN grown on AlN substrates
36. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
37. Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
38. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
39. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
40. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
41. Smooth cubic commensurate oxides on gallium nitride
42. Sapphire decomposition and inversion domains in N-polar aluminum nitride
43. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition
44. Polarity control and growth of lateral polarity structures in AlN
45. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
46. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition
47. On the strain in n-type GaN
48. Strain in Si doped GaN and the Fermi level effect
49. X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy
50. Erratum: “The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence” [Appl. Phys. Lett. 91, 203115 (2007)]
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