1. Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films
- Author
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Kelvin H. L. Zhang, Hao Yang, Chunchang Wang, Kuijuan Jin, Yongqiang Wang, Weiwei Li, Qian He, Judith L. MacManus-Driscoll, Haiyan Wang, Jun-xing Gu, Matias Acosta, and Albina Y. Borisevich
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Oxide ,chemistry.chemical_element ,02 engineering and technology ,Activation energy ,Dielectric ,021001 nanoscience & nanotechnology ,01 natural sciences ,Oxygen ,Ion ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Relaxation (physics) ,Limiting oxygen concentration ,010306 general physics ,0210 nano-technology ,Perovskite (structure) ,40 Engineering - Abstract
Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.
- Published
- 2019
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