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We present an in-depth study of the magnetotransport properties of epitaxial Fe3O4 films as a function of film thickness. The films, grown on α-Al2O3(0001) single crystals by atomic-oxygen assisted molecular beam epitaxy, exhibit high structural order and abrupt interfaces. These films contain antiphase boundaries (APBs), the density of which is strongly dependent on film thickness. A series of resistivity and magnetoresistance measurements demonstrate a systematic evolution of these properties with decreasing film thickness, revealing the impact of APBs on the transport properties in the films. We present a model based on the spin-polarized transport across an antiferromagnetically coupled APB in order to successfully reproduce our experimental data over a large range of applied magnetic fields. The comparison of this model with experimental results further clarifies the mechanism of the anomalous magnetotransport behavior in Fe3O4.

We report on the elaboration and physical properties of fully epitaxial Fe3O4∕Al2O3 bilayers to be included in magnetic tunnel junctions. Uncovered Fe3O4(111) single layers and bilayers were epitaxially grown onto sapphire (0001) substrates. Appropriate growth conditions lead to a stoichiometric Fe3O4 layer both at the Fe3O4∕Al2O3 interface and on the whole thickness, as checked by in situ x-ray photoelectron spectroscopy and by the observation of the Verwey transition, respectively. Transmission electron microscopy demonstrates the epitaxial growth of a γ-Al2O3 layer on top of Fe3O4(111), which insulating properties have been monitored by conductive tip atomic force microscopy.