29 results on '"Lodha, Saurabh"'
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2. Enhanced photoresponse of a dielectric-free suspended WSe2–ReS2 heterostructure photodetector
3. Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode
4. Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1−xO2 thin films
5. Charge trap layer enabled positive tunable Vfb in β-Ga2O3 gate stacks for enhancement mode transistors
6. Enhanced thermally aided memory performance using few-layer ReS 2 transistors
7. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
8. Enhanced n-type β-Ga2O3 ( 2 ¯ 01 ) gate stack performance using Al2O3/SiO2 bi-layer dielectric
9. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
10. Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
11. Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium
12. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
13. Ab-initio study of NiGe/Ge Schottky contact
14. Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer
15. Thickness tunable transport in alloyed WSSe field effect transistors
16. Temperature and field dependent low frequency noise characterization of Ge n-FETs
17. Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks
18. Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer
19. Schottky barrier heights for Au and Pd contacts to MoS2
20. Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation
21. Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
22. Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme
23. Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
24. Nanocrystal-based Ohmic contacts on n and p-type germanium
25. Metal/molecule/p-type GaAs heterostructure devices
26. Effect of contact properties on current transport in metal/molecule/GaAs devices
27. Device structure for electronic transport through individual molecules using nanoelectrodes
28. Enhanced current densities in Au∕molecule∕GaAs devices
29. Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs
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