69 results on '"Lockwood D"'
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2. Axial silicon-germanium nanowire heterojunctions: Structural properties and carrier transport
3. Spin-phonon interaction in transition-metal difluoride antiferromagnets: Theory and experiment
4. Structural and optical properties of axial silicon-germanium nanowire heterojunctions
5. Influence of interface potential on the effective mass in Ge nanostructures
6. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation
7. One-magnon and exciton inelastic light scattering in the antiferromagnet CoF2
8. Role of quantum confinement in luminescence efficiency of group IV nanostructures
9. Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters
10. The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis
11. Magnetooptic coupling coefficients for one- and two-magnon Raman scattering in rutile-structure antiferromagnets FeF2, MnF2, CoF2, and NiF2
12. Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers
13. Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
14. Quantum confinement in Si and Ge nanostructures
15. Strain-induced lateral self-organization in Si/SiO2 nanostructures
16. Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions
17. Stabilized porous silicon optical superlattices with controlled surface passivation
18. Photoluminescence and Raman spectral study of C incorporation in strained Si1−x−yGexCy epilayers on Si(100)
19. Optical phonons in InP1−xAsx revisited
20. Optical phonons via oblique-incidence infrared spectroscopy and their deformation potentials in In1−xGaxAs
21. Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates
22. Magnetic-field dependence of spin waves in ordered permalloy nanowire arrays in two dimensions
23. Circular dichroism and Raman optical activity in antiferromagnetic transition-metal fluorides
24. Phonons in strained In1−xGaxAs∕InP epilayers characterized by infrared reflectance
25. Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures
26. Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures
27. Infrared reflectivity of (GaAs)m/(AlAs)n superlattices
28. Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds
29. Effects of natural and electrochemical oxidation processes on acoustic waves in porous silicon films
30. Infrared ellipsometry of GaAs epilayers on Si(100)
31. Erratum: “Infrared dielectric response function of strained In1−xGaxAs/InP epilayers” [Appl. Phys. Lett. 81, 2175 (2002)]
32. Infrared dielectric response function of strained In1−xGaxAs/InP epilayers
33. Spin–phonon interaction and mode softening in NiF2
34. Polarized infrared spectroscopy at oblique incidence of optical phonons in In1−xGaxAs epilayers on InP
35. Determination of coverage in passivated porous silicon by Brillouin spectroscopy
36. Intersubband Raman Laser
37. Phonons in strained In1−xGaxAs/InP epilayers
38. Confinement of phonons in InGaAs/InP superlattices
39. Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices
40. Confined electronic states in CdTe/Cd0.9Mn0.1Te superlattices: A resonance Raman study
41. Formation of visible light emitting porous GaAs micropatterns
42. Nanocrystalline-silicon superlattice produced by controlled recrystallization
43. Strain effects on InSb phonons in bulk and superlattice layers
44. Thermal oxide on CdSe
45. Composition of AlGaAs
46. Structural and optical characterization of InP/GaxIn1−xAsyP1−y quantum wells and interfacial layers
47. Visible photoluminescence from porous GaAs
48. Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation
49. Visible photoluminescence from helium-ion implanted carbon in silicon
50. Structure damage in reactive-ion and laser etched InP/GalnAs microstructures
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