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8 results on '"Lang O."'

1. Thin film growth and band lineup of In���O��� on the layered semiconductor InSe

Author

Lang, O., Pettenkofer, C., Sánchez-Royo, Juan Francisco, Segura, Alfredo, Klein, Andreas, and Jaegermann, Wolfram

Abstract

Thin films of the transparent conducting oxide In���O��� have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In���O��� and the layered semiconductor InSe.

Published
2021
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2. Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles

Author

Lang, O., Klein, Andreas, Pettenkofer, Christian, Jaegermann, Wolfram, Chevy, Alain, Lang, O., Klein, Andreas, Pettenkofer, Christian, Jaegermann, Wolfram, and Chevy, Alain

Abstract

Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low‐energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x‐ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule).

Published
2021

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