38 results on '"Kroemer H"'
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2. 88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers
3. Midinfrared studies of the contact region at superconductor–semiconductor interfaces
4. Staggered to straddling band lineups in InAs/Al(As, Sb)
5. Direct patterning of surface quantum wells with an atomic force microscope
6. Structural and electrical properties of low-temperature-grown Al(As,Sb)
7. Local conduction band offset of GaSb self-assembled quantum dots on GaAs
8. Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy
9. Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy
10. Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots
11. Interface roughness of InAs/AlSb superlattices investigated by x‐ray scattering
12. Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
13. Strong far‐infrared intersubband absorption under normal incidence in heavilyn‐type doped nonalloy GaSb‐AlSb superlattices
14. Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study
15. Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells
16. Temperature-dependent mobility of a GaAs/AlGaAs heterostructure after deposition of MgO and superconducting YBa2Cu3O7−x
17. Interface roughness scattering in InAs/AlSb quantum wells
18. Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes
19. Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices
20. Raman scattering study of InAs/GaInSb strained layer superlattices
21. InsituYBa2Cu3O7−xsuperconductor films on GaAs/AlAs superlattices
22. Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
23. Far‐infrared photoresponse of the InAs/GaInSb superlattice
24. Quantum Hall effect in InAs/AlSb quantum wells
25. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices
26. Step‐flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices
27. Superconducting YBaCuO thin films on GaAs/AlGaAs
28. Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film
29. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
30. Rotational slip in III‐V heterostructures grown by molecular‐beam epitaxy
31. Measurement of isotype heterojunction barriers byC‐Vprofiling
32. Raman scattering in a Ga1−xInxP strained heterostructure
33. Photocollection efficiency and interface charges of MBE‐grown abruptp(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
34. Interstitial potential differences, electronegativity differences, and effective ionic charges in zinc‐blende‐type semiconductors
35. E0+Δ0transitions in GaSb/AlSb quantum wells
36. Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period
37. TRANSVERSE NEGATIVE DIFFERENTIAL MOBILITIES FOR HOT ELECTRONS AND DOMAIN FORMATION IN GERMANIUM
38. Preparation and some Properties of Mg2Ge Single Crystals and of Mg2Ge p‐n Junctions
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