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Nanostructures consisting of C_ molecules were fabricated on a GaSe/MoS_2 heterostructure. A submonolayer film of a lamellar compound semiconductor GaSe was grown on a MoS_2 substrate to form nanoscale holes or grooves surrounded by monolayer steps. Atomic force microscope (AFM) observation indicates that C_ molecules grow only in the bare MoS2 nanoregions at a substrate temperature of 180 degrees C. C_ molecules fill up those holes and grooves, and nanoscale C_ domains with polygonal shapes can be formed. This selective growth method can be combined with nanoscale patterning made by a scanning-tunneling microscope or AFM to produce nanostructures of molecular crystals with designed shapes. (c) 1997 American Institute of Physics.