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Thin-film silicon-on-insulator (SOI) device characteristics have been investigated in terms of stress in the buried oxide interface by both simulation and experiment. Bonded SOI wafer with a 400 nm buried oxide and SOI wafer with a 100 nm buried oxide which is made by implanted oxygen are used as a substrate for device fabrication. From the simulation, it is demonstrated that the 100 nm buried oxide has higher compressive stress than the 400 nm counterpart after the local oxidation of silicon process. With the highly compressive-stressed buried oxide, boron atoms may accumulate at the silicon side, especially at the silicon edge, under tensile stress so that these accumulated boron atoms increase threshold voltage of the edge channel. Therefore, it is found that there is no hump of the drain current in the subthreshold drain current–gate-voltage characteristics of thin-film SOI n-channel metal–oxide–semiconductor field-effect transistors (MOSFET) with the highly compressed buried oxide.

The effects of two‐step hydrogenation on the performance of visible p‐i‐n thin‐film light‐emitting diode (TFLED) have been investigated. The TFLEDs were fabricated by a photochemical vapor deposition (CVD) method. A hydrogenation process was performed in two steps: One was an in situ hydrogenation process using a photo‐CVD system and the other an ex situ hydrogenation process using a plasma apparatus after TFLED fabrication. It was found that the performance of visible a‐SiC:H‐based p‐i‐n TFLEDs was drastically improved by a two‐step hydrogenation process. The threshold voltage decreased by about 3 V, the electroluminescence peak shifted towards a shorter wavelength, from 680 to 590 nm, and the brightness increased from 1.3 to 128 cd/m2.

The effects of hydrogen passivation on the performance of visible p‐i‐n thin‐film light‐emitting diodes (TFLEDs) have been investigated. The TFLEDs were fabricated using a photochemical vapor deposition method. The hydrogenation process was performed using an inductively coupled plasma system at a rf power of 800 W and a process pressure of 20 mTorr for 30 min. It was found that hydrogenation dramatically improved the performance of these TFLEDs. The threshold voltage was decreased by about 1 V, the electroluminescence (EL) peak shifted from 704.5 to 689 nm, the EL intensity increased by a factor of 3, and the brightness increased from 1 to 24 cd/m2 by 24 times.