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We report on a laboratory-based facility for in-house x-ray absorption fine structure (XAFS) measurements. The device consists of a conventional x-ray source for the production of the incident polychromatic radiation and a von Hamos bent crystal spectrometer for the analysis of the incoming and transmitted radiation. The reliability of the laboratory-based setup was evaluated by comparing the Cu K-edge and Ta L3- edge XAFS spectra obtained in-house with the corresponding spectra measured at a synchrotron radiation facility. To check the accuracy of the device, the K- and L-edge energies and the attenuation coefficients below and above the edges of several 3d, 4d, and 5d elements were determined and compared with the existing experimental and theoretical data. The dependence of the XAFS spectrum shape on the oxidation state of the sample was also probed by measuring inhouse the absorption spectra of metallic Fe and two Fe oxides (Fe2O3 and Fe3O4).

The design and performance of a high-resolution transmission-type X-ray spectrometer for use in the 15-26 keV energy range at synchrotron light sources is reported. Monte Carlo X-ray-tracing simulations were performed to optimize the performance of the transmission-type spectrometer, based on the DuMond geometry, for use at the Super X-ray absorption beamline of the Swiss Light Source at the Paul Scherrer Institute. This spectrometer provides an instrumental energy resolution of 3.5 eV for X-ray emission lines around 16 keV and 12.5 eV for emission lines at 26 keV, which is comparable to the natural linewidths of the K and L X-ray transitions in the covered energy range. First experimental data are presented and compared with results of the Monte Carlo X-ray simulations.

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.