7 results on '"Horiguchi, Seiji"'
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2. Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors
3. Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor
4. Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film
5. Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon
6. New model of electron free path in multiple layers for Monte Carlo simulation
7. Interface-trap generation modeling of Fowler–Nordheim tunnel injection into ultrathin gate oxide
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