153 results on '"Greene, J. E."'
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2. Effects of incident N atom kinetic energy on TiN/TiN(001) film growth dynamics: A molecular dynamics investigation
3. Fracture-resistant thin-film metallic glass: Ultra-high plasticity at room temperature
4. Tracing the 4000 year history of organic thin films: From monolayers on liquids to multilayers on solids
5. Tracing the 5000-year recorded history of inorganic thin films from ∼3000 BC to the early 1900s AD
6. Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition
7. Organic thin films: From monolayers on liquids to multilayers on solids
8. Electron/phonon coupling in group-IV transition-metal and rare-earth nitrides
9. Toughness enhancement in hard ceramic thin films by alloy design
10. Raman scattering from TiNx(0.67 ≤ x ≤ 1.00) single crystals grown on MgO(001)
11. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition
12. Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy
13. Effect of off stoichiometry on Raman scattering from epitaxial and polycrystalline HfNx (0.85≤x≤1.50) grown on MgO(001)
14. Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology
15. Raman scattering from epitaxial TaNx(0.94≤x≤1.37) layers grown on MgO(001)
16. Thermally induced self-hardening of nanocrystalline Ti–B–N thin films
17. Co Si 2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation
18. Raman scattering from epitaxial HfN layers grown on MgO(001)
19. Nucleation and growth kinetics of spiral steps on TiN(111): Anin situlow-energy electron microscopy study
20. Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration rates
21. Epitaxial and polycrystalline HfNx (0.8⩽x⩽1.5) layers on MgO(001): Film growth and physical properties
22. Self-organized nanocolumnar structure in superhard TiB2 thin films
23. Growth of CoSi2 on Si(001) by reactive deposition epitaxy
24. Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness
25. Growth and physical properties of epitaxial HfN layers on MgO(001)
26. Directed nanostructural evolution in Ti0.8Ce0.2N layers grown as a function of low-energy, high-flux ion irradiation
27. Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67⩽x<1.0) layers on MgO(001)
28. Direct measurements of strain depth profiles in Ge/Si(001) nanostructures
29. Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing
30. Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)]
31. Growth and physical properties of epitaxial CeN layers on MgO(001)
32. Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy
33. Pathways of atomistic processes on TiN(001) and (111) surfaces during film growth: anab initiostudy
34. Vacancy hardening in single-crystal TiNx(001) layers
35. Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics
36. Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1−xGex/Si(001) growth from hydride precursors
37. F-enhanced morphological and thermal stability of NiSi films on BF2+-implanted Si(001)
38. Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions
39. Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy
40. Band gap in epitaxial NaCl-structure CrN(001) layers
41. Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties
42. Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)
43. C lattice site distributions in metastable Ge1−yCy alloys grown on Ge(001) by molecular-beam epitaxy
44. Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation
45. Quantitative C lattice site distributions in epitaxial Ge1−yCy/Ge(001) layers
46. Epitaxial NaCl structure δ-TaNx(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio
47. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer
48. Evolution of nanoscale texture in ultrathin TiN films
49. Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
50. Epitaxial Sc1−xTixN(001): Optical and electronic transport properties
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