85 results on '"Foxon, C. T."'
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2. Growth and characterization of highly mismatched GaN1−xSbx alloys
3. Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As
4. Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range
5. Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films
6. Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
7. Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)
8. Doping of GaN1−xAsx with high As content
9. Carrier localization and related photoluminescence in cubic AlGaN epilayers
10. Thermal stability of amorphous GaN1−xAsx alloys
11. Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
12. GaN1−xBix: Extremely mismatched semiconductor alloys
13. Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
14. Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes
15. Low gap amorphous GaN1−xAsx alloys grown on glass substrate
16. Atomic scale characterization of Mn doped InAs/GaAs quantum dots
17. A low field technique for measuring magnetic and magnetoresistance anisotropy coefficients applied to (Ga,Mn)As
18. Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range
19. Reliability assessment and degradation analysis of 1.3 μm GaInNAs lasers
20. Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures
21. Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control
22. X-ray in-plane scattering investigation of GaN nanorods
23. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
24. Achieving high Curie temperature in (Ga,Mn)As
25. Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy
26. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
27. Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
28. Secondary magnetic phases in (Ga,Mn)As determined by x-ray magnetic circular dichroism
29. Domain imaging and domain wall propagation in (Ga, Mn)As thin films with tensile strain
30. Measuring the hole chemical potential in ferromagnetic Ga1−xMnxAs∕GaAs heterostructures by photoexcited resonant tunneling
31. Control of coercivities in (Ga,Mn)As thin films by small concentrations of MnAs nanoclusters
32. Structural characterization of zincblende Ga1−xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates
33. Generation of terahertz monochromatic acoustic phonon pulses by femtosecond optical excitation of a gallium nitride/aluminium nitride superlattice
34. p-type conductivity in cubic (Ga,Mn)N thin films
35. Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs
36. Influence of internal fields on radiative and nonradiative processes in AlN/GaN superlattices
37. Mn L3,2 x-ray absorption from (Ga,Mn)As and (Ga,Mn)N
38. Influence of the Mn interstitial on the magnetic and transport properties of (Ga,Mn)As
39. Magnetic domain imaging of ferromagnetic GaMnAs films
40. Surface effects in Mn L3,2 x-ray absorption spectra from (Ga,Mn)As
41. Influence of low temperature annealing on the micromagnetic structure of GaMnAs films
42. Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
43. Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets
44. Investigation of radiative recombination from Mn-related states in Ga1−xMnxAs
45. Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors
46. Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1−xMnxAs
47. High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing
48. Hall effect and hole densities in Ga1−xMnxAs
49. The nature of arsenic incorporation in GaN
50. Carrier relaxation dynamics for As defects in GaN
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