61 results on '"Egawa, T"'
Search Results
2. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
3. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
4. Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition
5. Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN
6. Compositional instability in InAlN/GaN lattice-matched epitaxy
7. Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes
8. Pd/InAlN Schottky diode with low reverse current by sulfide treatment
9. Effect of n-GaN thickness on internal quantum efficiency in InxGa1-xN multiple-quantum-well light emitting diodes grown on Si (111) substrate
10. Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers
11. Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
12. Low-temperature electroluminescence quenching of AlGaN deep ultraviolet light-emitting diodes
13. Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)
14. Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes
15. Improved performance of InAlN-based Schottky solar-blind photodiodes
16. Suppression of the subband parasitic peak by 1nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes
17. AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition
18. Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes
19. Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors
20. Sheet carrier density enhancement by Si3N4 passivation on nonpolar a-plane (112¯0) sapphire grown AlGaN∕GaN heterostructures
21. Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes
22. High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template
23. Highly efficient GaN-based light emitting diodes with micropits
24. Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer
25. Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate
26. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
27. Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN
28. Current collapse-free i-GaN∕AlGaN∕GaN high-electron-mobility transistors with and without surface passivation
29. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
30. Formation chemistry of high-density nanocraters on the surface of sapphire substrates with anin situetching and growth mechanism of device-quality GaN films on the etched substrates
31. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
32. Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
33. Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
34. Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
35. Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
36. Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition
37. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
38. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
39. Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
40. Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
41. Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition
42. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
43. Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
44. The infrared optical functions of AlxGa1−xN determined by reflectance spectroscopy
45. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density
46. Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition
47. Optical properties of AlxGa1−xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
48. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
49. Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode
50. Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.