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In this paper, we study terahertz generation through optical rectification in reflection at normal incidence in a dielectric nonlinear crystal. We first analyze, with a nonlinear optical model, the sample parameters (thickness, absorption at both laser and terahertz wavelengths, etc.) for which a terahertz optical rectification reflection scheme is preferable to the common transmission scheme. Then, we report our experimental observations of a reflected terahertz signal generated at the surface of a ZnTe crystal. The reflected terahertz signal shares all the characteristics of a signal generated in transmission but is not limited by absorption losses in the crystal, thereby providing a broader bandwidth. At high pump laser power, the signal exhibits saturation, which is caused by the decrease of the nonlinear susceptibility due to photocarriers generated by two-photon absorption. This reflection scheme could be of great importance for terahertz microscopy of opaque materials like, e.g., humid samples or samples exhibiting strong absorption bands or to study samples for which the transmitted signal cannot be recorded.

We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms transmitted through silicon-ion-implanted semi-insulating gallium arsenide substrates, as-implanted or post-annealed by rapid thermal annealing, were analyzed by assuming a multi-layered Gaussian refractive index profile in the ∼sub-micrometer-thick implantation region. The implantation energy and dosages in this work were 200 KeV, 1014, 5 × 1014, and 1015 ions/cm2, respectively. The average values of real ( n) and imaginary ( κ) parts of refractive indices of an as-implanted sample in the depth range of 0–800 nm are 5.8 and 0.7, respectively, at 0.5 THz and are 6.2 and 0.2, respectively, at 1 THz. On the other hand, the refractive index profile of the post-annealed samples displays a prominent Gaussian-like form, and peak refractive indices ( n ∼ 25 and κ ∼ 32.7 at 0.5 THz and n, κ ∼17 at 1 THz) were found to be at the depth of 210 nm. Reconstructed dopant profiles in as-implanted, implanted, and post-annealed substrates were found to be in good agreement with measurements by secondary ion mass spectroscopy as well as simulation by the Monte Carlo method. We were also able to determine accurately the projected range ( Rp), straggle ( Rs), and concentration of dopants by the analysis of THz-TDS data. The spatial resolution, along the depth direction, of the THz-TDS technique for depth profiling of dopants was estimated to be as small as 8-nm. This work suggests the feasibility of using THz-TDS for nondestructive and non-contact diagnostics for profiling dopants in semiconductors.

We study optical rectification in GaSe by performing THz generation with femtosecond laser pulses whose wavelength is tuned from below to above the GaSe bandgap. As expected from a theory, we observed a first THz emission peak at 1.77 eV, where phase matching is realized. A second THz emission peak was recorded, when the pump photon energy reaches the crystal bandgap (2.205 eV). This can be attributed to a resonance of the GaSe nonlinearity. In crystals thinner than the coherence length, the bandgap peak is stronger than the phase-matched one.