14 results on '"Detchprohm, T."'
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2. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition
3. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
4. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
5. Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
6. GaInN∕GaN growth optimization for high-power green light-emitting diodes
7. Improvement of far-field pattern in nitride laser diodes
8. Deep levels in the upper band‐gap region of lightly Mg‐doped GaN
9. Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
10. Photoluminescence of residual transition metal impurities in GaN
11. Analysis of deep levels inn‐type GaN by transient capacitance methods
12. Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
13. Schottky barrier onn‐type GaN grown by hydride vapor phase epitaxy
14. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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