1. Numerically generated resonant tunneling diode equivalent circuit parameters
- Author
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Kevin J. Webb, Glenn Starnes, Keh-Ching Huang, Roger K. Lake, Michael R. Melloch, David B. Janes, and Michael M. Carroll
- Subjects
Inductance ,Materials science ,Condensed matter physics ,Equivalent series resistance ,Scattering ,Analytical chemistry ,Resonant-tunneling diode ,General Physics and Astronomy ,Equivalent circuit ,Inelastic scattering ,Circuit diagram ,Diode - Abstract
We present results from a numerical solution of a resonant tunneling diode structure, using a time‐independent Schrodinger equation without considering scattering. Intrinsic circuit parameters such as conductance, capacitance, and inductance are extracted from the numerical results and compared with experimental data obtained from dc and microwave characterization of GaAs/AlGaAs devices. A study of the influence of different lightly doped spacer layer thicknesses on the emitter side reveals the relationship between spacer layer thickness and the circuit parameters. From these results, we provide explanations for the behavior of the biased diode circuit parameters. The simulated data show good qualitative agreement with experimental results; possible explanations for deviations between experimental values and simulated data, including inelastic scattering and series resistance effects, are discussed.
- Published
- 1994
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