35 results on '"Chen, C. Q."'
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2. High efficiency and broadband acoustic diodes
3. The pore-load modulus of ordered nanoporous materials with surface effects
4. The effects of cold rolling on the microstructural and spall response of 1100 aluminum
5. Terahertz intersubband transition in GaN/AlGaN step quantum well
6. Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 γ-ray irradiation
7. Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition
8. A coupled analysis of the piezoresponse force microscopy signals
9. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
10. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
11. On the evolution of film roughness during magnetron sputtering deposition
12. Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field
13. Dynamic smoothing of nanocomposite films
14. Tunable self-organization of nanocomposite multilayers
15. On the dynamic roughening transition in nanocomposite film growth
16. Nanoscale deformation mechanism of TiC/a-C nanocomposite thin films
17. Surface roughness evolution of nanocomposite thin films
18. Nanoscale deformation in TiC∕a-C multilayered nanocomposite coatings
19. Bending strength and flexibility of ZnO nanowires
20. Internal polarization fields in GaN∕AlGaN multiple quantum wells with different crystallographic orientations
21. Luminescence from stacking faults in gallium nitride
22. Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth
23. Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics
24. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
25. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
26. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
27. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
28. AlGaN layers grown on GaN using strain-relief interlayers
29. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
30. Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells
31. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates
32. Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
33. Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials
34. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
35. Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H–SiC
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