Author: "Centrale Lille" / Publisher: aip publishing - Searchworks@Jio Institute Digital Library Search Results

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130 results on '"Centrale Lille"'

1. Spoof surface plasmon polariton supported by square ring metasurface for wearable body area network

Author: A. Ghaddar, B. Garnier, F. Rault, É. Lheurette, L. Burgnies, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), SubLambda - IEMN (SubLambda - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université de Lille, Université du Littoral Côte d'Opale (ULCO), ACKNOWLEDGMENTSThis work was carried out in the framework of the project 'CONTEXT, ANR-17-CE24-0013' financially supported by the French Agence Nationale de la Recherche (ANR) and the French Direction Générale de l’Armement (DGA). This research work has been partially undertaken with support of IEMN characterization (PCMP) facilities, especially CHOP. The authors acknowledge François Dassonville at Ecole Nationale Supérieure des Arts et Industries Textiles (ENSAIT) for his precious help for embroidering the metasurface., PCMP CHOP, and ANR-17-CE24-0013,CONTEXT,Textiles connectés pour les communications autour du corps humain(2017)
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Electromagnetism, Wave propagation, Metamaterials, General Physics and Astronomy, Localized states, Telecommunications engineering, Surface plasmon polaritons
Abstract: International audience; A metasurface consisting of a 2D periodic square lattice of metallic square ring resonators is considered for supporting spoof surface plasmon polariton (SSPP) modes. First, SSPP modes are highlighted by simulated dispersion curves. The dispersion curves are analyzed by considering hybridization of modes in either a patch or an aperture array with frequency shifts. Hybridization of modes is also supported by means of surface current and electric field mappings showing consistent symmetric and anti-symmetric fields. Second, it is shown that a dipole antenna located near the metasurface is able to generate SSPP modes. The transmission spectra between two antennas located at each extremity of the metasurface show transmission enhancements compared with propagation in free space. The transmission enhancements are shown for different locations of the antennas either facing each other or positioned in diagonal. Finally, the transmission enhancement is connected to SSPP modes by comparing the transmission spectra and the measured dispersion curves with each other. Specifically, two transmission windows measured for an embroidered metasurface are related to the cutoff frequency of the two SSPP modes supported by the metasurface as evidenced by the measured dispersion curves.
Published: 2023

2. Study of reaction-diffusion controlled mass transport in stopped-flow fluidics for spatiotemporal multiplexing

Author: Marcel Tintelott, Pradnya Gharpure, Yannick Coffinier, Xuan Thang Vu, Alexis Vlandas, Sven Ingebrandt, Vivek Pachauri, Universitätsklinikum RWTH Aachen - University Hospital Aachen [Aachen, Germany] (UKA), Rheinisch-Westfälische Technische Hochschule Aachen University (RWTH), Delft University of Technology (TU Delft), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), NanoBioInterfaces - IEMN (NBI - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), and ACKNOWLEDGMENTSThe authors thank the German Research Foundation (DFG) for funding the research project 'Molecular Programs for neurodegenerative diseases markers Biosensing' (Project No.391107823).
Subjects: [PHYS]Physics [physics], Fluid Flow and Transfer Processes, Mechanical Engineering, Microfluidics, Computational Mechanics, Mass diffusivity, Condensed Matter Physics, Finite volume methods, Detection limit, [SPI]Engineering Sciences [physics], Mechanics of Materials, Finite-element analysis, Fluidics, Diffusion barriers
Abstract: International audience; Integration of biochemical reaction networks (BRNs) with biosensor platforms has emerged as a technological niche overcoming challenges related to the loss of sensitivity and selectivity in biological media. Optimal operation of BRNs in microfluidics requires control over reaction-diffusion dominated mass transport, heavily influenced by fluidic parameters. In this work, we study and design an on-chip platform combining a programable unique molecular amplification as BRNs with nanoscale biologically sensitive field-effect transistor (BioFET) arrays, which employs a physical diffusion barrier to gain spatial and temporal control over mass transport. Computational and numerical approaches, such as finite element and finite volume methods, were implemented to solve partial differential equations numerically after domain approximation by numerous finite elements. The focus on geometrical optimizations of fluidics is aimed at mass transport to occur with precise spatial and temporal control toward BioFET-arrays. Adopting a 0.5 pM limit-of-detection (LoD) for biochemical monitoring of BRNs via a single-stranded deoxyribonucleic acid (ssDNA) output, we show that it was possible to compartmentalize the mass transport spatiotemporally without crosstalk, which can be of critical advantage for using biosensor arrays in order to realize simplified multiplexed point-of-care biosensors.
Published: 2023

3. Tuning photoacoustics with nanotransducers via thermal boundary resistance and laser pulse duration

Author: Michele Diego, Marco Gandolfi, Stefano Giordano, Fabien Vialla, Aurélien Crut, Fabrice Vallée, Paolo Maioli, Natalia Del Fatti, Francesco Banfi, FemtoNanoOptics [FemtoNanoOptics], Università cattolica del Sacro Cuore [Brescia] [Unicatt], Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN [AIMAN-FILMS - IEMN], Institut Lumière Matière [Villeurbanne] [ILM], Institut Universitaire de France [IUF], FemtoNanoOptics (FemtoNanoOptics), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Università cattolica del Sacro Cuore [Brescia] (Unicatt), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), This work was partially supported by the LABEX iMUST (No. ANR-10-LABX-0064) of Université de Lyon within the program 'Investissements d'Avenir' (No. ANR-11-IDEX-0007) and by ANR through projects 2D-PRESTO (No. ANR-19-CE09-0027) and ULTRASINGLE (No. ANR-20-CE30-0016). F.B. acknowledges financial support from CNRS through Délégation CNRS 2021–2022., ANR-10-LABX-0064,Imust,Institut for Multiscale Science and Technology : from Fundamental Physics and Chemistry to Engineering in New Material and Processes and Ecotechnologies(2010), ANR-11-IDEX-0007,Avenir L.S.E.,PROJET AVENIR LYON SAINT-ETIENNE(2011), ANR-19-CE09-0027,2D-PRESTO,Nano-engénierie 2D à haute pression : au-dela de la straintronique(2019), and ANR-20-CE30-0016,ULTRASINGLE,Transferts d'énergie ultrarapide dans les nano-objets individuels(2020)
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Physics and Astronomy (miscellaneous), Lasers, Interfacial thermal resistance, Nanoelectronics, Medical treatment optimization, Thermal effects, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], Acoustic waves, Photoacoustic effects, Graphene, Acoustic phenomena, Nanoparticles, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract: International audience; The photoacoustic effect in liquids, generated by metal nanoparticles excited with short laser pulses, offers high contrast imaging and promising medical treatment techniques. Understanding the role of the thermal boundary resistance (TBR) and the laser pulse duration in the generation mechanism of acoustic waves is essential to implement efficient photoacoustic nanotransducers. This work theoretically investigates, for the paradigmatic case of water-immersed gold nanocylinders, the role of the TBR and laser pulse duration in the competition between the launching mechanisms: the thermophone and the mechanophone. In the thermophone, the nanoparticle acts as a nanoheater and the wave is launched by water thermal expansion. In the mechanophone, the nanoparticle directly acts as a nanopiston. Specifically, for a gold–water interface, the thermophone prevails under ns light pulse irradiation, while the mechanophone dominates shortening the pulse to the 10 ps regime. For a graphene-functionalized gold–water interface, instead, the mechanophone dominates over the entire range of explored laser pulse durations. The results point to high-TBR, liquid-immersed nanoparticles as potentially efficient photoacoustic nanogenerators, with the advantage of keeping the liquid environment temperature unaltered.
Published: 2022

4. Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices

Author: A. El Hadi Khediri, B. Benbakhti, J.-C. Gerbedoen, H. Maher, A. Jaouad, N. E. Bourzgui, A. Soltani, Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Liverpool John Moores University (LJMU), Laboratory for Integrated Micro Mechatronics Systems (LIMMS), The University of Tokyo (UTokyo)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was supported by GANEX, a public funded 'Investissements d’Avenir' program managed through the French ANR agency, by RENATECH network, by ANR project Cleaning No. ANR-15-CE09-0019, and by MITACS & NSERC scholarships/partnership, Renatech Network, CMNF, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and ANR-15-CE09-0019,CLEANING,Capteurs de gaz muLtifonctions pour anti-pollution A base de Nitrure de Gallium pour application automobile(2015)
Subjects: [PHYS]Physics [physics], Semiconductor device fabrication, [SPI]Engineering Sciences [physics], Electric measurements, Physics and Astronomy (miscellaneous), Raman spectroscopy, Electrical properties and parameters, Recombination reactions, Field effect transistors, Waveguides
Abstract: International audience; The impact of Cubic Silicon Carbide (3C-SiC) transition layer on breakdown voltage and frequency performance of GaN high electron mobility transistors is investigated. A combination of distinct material and device characterizations techniques, including Raman spectroscopy, coplanar waveguides, electrical measurements, and Technology Computer-Aided Design (TCAD) simulations, are adopted to inspect the role of the 3C-SiC interlayer. Raman spectra reveal a good quality of the 3C-SiC layer, similar to the mono-crystalline 3C-SiC spectra. A relatively low transmission loss of ∼0.16 dB/mm at 40 GHz is measured for the device with 3C-SiC layer, rather than 2.1 dB/mm for the device without 3C-SiC. In addition, a soft breakdown voltage around 1530 V at 1 μA/mm is achieved, which is three times larger compared with that of the conventional device. The failure mechanism, related to carrier injection at the nucleation layer, is not observed in the structure with the 3C-SiC layer. Instead, TCAD simulations disclose a substantial improvement of the buffer/substrate interface through the suppression of an interface current path.
Published: 2022

5. SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure

Author: Kevin Froberger, Benjamin Walter, Melanie Lavancier, Romain Peretti, Guillaume Ducournau, Jean-François Lampin, Marc Faucher, Stefano Barbieri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Vmicro SAS (Vmicro), Nano and Microsystems - IEMN (NAM6 - IEMN), We acknowledge partial financial support from the French Renatech network, Nord-Pas de Calais Regional Council (Grant STARS-ATENA), Fonds Européens de Développement Régional, and CPER 'Photonics for Society.', and Renatech Network
Subjects: Terahertz detectors, [SPI]Engineering Sciences [physics], Physics and Astronomy (miscellaneous), Antennas, Silicon-on-insulator, Thermal effects
Abstract: International audience; We present a micro-mechanical terahertz (THz) detector fabricated on a silicon on insulator substrate and operating at room-temperature. The device is based on a U-shaped cantilever of micrometric size, on top of which two aluminum half-wave dipole antennas are deposited. This produces an absorption extending over the [Formula: see text] THz frequency range. Due to the different thermal expansion coefficients of silicon and aluminum, the absorbed radiation induces a deformation of the cantilever, which is read out optically using a 1.5 μm laser diode. By illuminating the detector with an amplitude modulated, 2.5 THz quantum cascade laser, we obtain, at room-temperature and atmospheric pressure, a responsivity of [Formula: see text] for the fundamental mechanical bending mode of the cantilever. This yields noise-equivalent-power of [Formula: see text] at 2.5 THz. Finally, the low mechanical quality factor of the mode grants a broad frequency response of approximately 150 kHz bandwidth, with a thermal response time of ∼ 2.5 μs.
Published: 2022

6. Dynamical effective parameters of elastic superlattice with strong acoustic contrast between the constituents

Author: Yurii Zubov, Arkadii Krokhin, Bahram Djafari-Rouhani, University of North Texas (UNT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ACKNOWLEDGMENTSThis work is supported by an Emerging Frontiers inResearch and Innovation grant from the National ScienceFoundation (Grant No. 1741677)., and Physique-IEMN (PHYSIQUE-IEMN)
Subjects: Physics, Physics and Astronomy (miscellaneous), Condensed matter physics, Band gap, Superlattice, General Physics and Astronomy, Metamaterial, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Homogenization (chemistry), Layered structure, [SPI]Engineering Sciences [physics], Effective mass (solid-state physics), 0103 physical sciences, Електронні властивості низьковимірних систем, 010306 general physics, 0210 nano-technology, Elastic modulus, Bloch wave
Abstract: Analytical formulas are obtained for frequency-dependent effective elastic modulus and effective mass density for a periodic layered structure. The proposed homogenization procedure is valid at sufficiently high frequencies well above the lowest band gap in the acoustic spectrum of the structure. It is shown that frequencydependent effective parameters may take negative values either in different regions of frequencies or in the same quite narrow region. This property demonstrates that 1D elastic structure may behave in the limit of small Bloch wave vectors as a double-negative acoustic metamaterial. Отримано аналітичні формули для частотно-залежних ефективного модуля пружності та ефективної щільності періодичної шаруватої структури. Запропонована процедура гомогенізації справедлива при досить високих частотах, що перевищують частоту першої забороненої зони в акустичному спектрі структури. Показано, що залежні від частоти ефективні параметри можуть набувати від’ємних значень або в різних частотних областях, або в одній досить вузькій області. Ця властивість показує, що одновимірна пружна структура в межі малих блоховських хвильових векторів може поводитися як акустичний метаматериал, у якого обидва ефективні параметри від’ємні. Получены аналитические формулы для частотнозависимых эффективного модуля упругости и эффективной плотности периодической слоистой структуры. Предложенная процедура гомогенизации справедлива при достаточно высоких частотах, превышающих частоту первой запрещенной зоны в акустическом спектре структуры. Показано, что зависящие от частоты эффективные параметры могут принимать отрицательные значения либо в различных частотных областях, либо в одной достаточно узкой области. Данное свойство показывает, что одномерная упругая структура в пределе малых блоховских волновых векторов может вести себя как акустический метаматериал, у которого оба эффективных параметра отрицательны.
Published: 2018

7. Switchability of a single port SAW resonator using the electrical Bragg band gap

Author: R. Alcorta Galván, C. Croënne, B. Dubus, B. Loiseaux, E. Eustache, M. Bertrand, A.-C. Hladky-Hennion, Acoustique - IEMN (ACOUSTIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Thales Research and Technologies [Orsay] (TRT), THALES [France], The authors wish to thank Claude Prévot for fruitful discussions and Stéphane Xavier for electron-beam lithography. This work was supported by the French Agence Nationale de la Recherche (FORMOSA Project No. ANR-18-ASMA-0003-01), the Agence Innovation Défense, and the Région Hauts-de-France., and ANR-18-ASMA-0003,FORMOSA,Filtres phOnoniques Radiofréquences MicrO-uSinés Agiles(2018)
Subjects: [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], Phononic crystal, Surface acoustic waves, Physics and Astronomy (miscellaneous), Surface acoustic wave device, Piezoelectricity, Physics::Optics, Cavity resonance, Finite-element analysis, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Interdigital transducers
Abstract: A proof of concept of a new solution for achieving tunable SAW components based on the electrical Bragg band gap concept developed for piezoelectric phononic crystals is presented on a SAW resonator on a [Formula: see text] substrate. In this work, it is shown that for a fixed geometry, it is possible to shift the main resonance frequency by modifying the electrical condition on the electrodes that constitute the cavity's mirrors. The concept was validated by both numerical simulations and experimental characterization of single port resonators fabricated on [Formula: see text].
Published: 2022

8. Three port photonic and plasmonic demultiplexers based on Cross and U-shaped stub structures: Application for filtering and sensing

Author: El Houssaine El Boudouti, Bahram Djafari Rouhani, Soufyane Khattou, Madiha Amrani, Abdellatif Akjouj, Abdelkrim Talbi, Abdelkader Mouadili, Université Mohammed Premier [Oujda], Laboratoire de Microélectronique Appliquée, Université Djillali Liabbes, Faculte des sciences et Techniques Mohammedia [Casablanca] (FSTM), Université Hassan II [Casablanca] (UH2MC), Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and The work of S. Khattou and M. Amrani has been supported by the National Center of Scientific and Technical Research (CNRST) under the Excellence Research Scholarship.
Subjects: Fano resonances, Photonic crystals, [SPI]Engineering Sciences [physics], Demultiplexers, Sensors, Dielectric properties, Coaxial connectors, Plasmonics, Physics::Optics, General Physics and Astronomy, Finite-element analysis, Telecommunications engineering, Electromagnetically induced transparency
Abstract: International audience; We propose the design of three port photonic and plasmonic demultiplexers where filtering toward the two outputs is based on the phenomena of Fano resonances and electromagnetically induced transparency (EIT). We use a Cross-shape resonator in one output and a U-shape resonator composed of two stubs in the other output. We give a theoretical demonstration of the geometrical parameters of both resonators in order to filter one wavelength in one output while leaving the other output unperturbed. These results are confirmed by experimental validation in the radio frequency domain and a numerical simulation in the infrared (IR) domain using plasmonic metal–insulator–metal waveguides. The Cross resonator in the first output can give rise to an EIT resonance, whereas the U-shaped resonator in the second output may exhibit both EIT and Fano resonances depending on the lengths chosen for the stubs. Therefore, different demultiplexing schemes can be proposed such as achieving a Fano resonance in one output and an EIT in the other, or EIT resonances in both outputs. The Fano resonance is obtained by bringing resonance close to transmission zero, whereas the EIT results from the squeezing of resonance between two transmission zeros. When the widths of the resonances tend to zero, they transform to trapped or bound states in the continuum with an infinite lifetime. We show that the crosstalk between the two channels can be reduced to [Formula: see text] dB and the sensitivity can reach 2390.8 nm/RIU, RIU is the refractive index units. Finally, we highlight the performance of our design as a high sensitive filter and sensor in the IR domain. In this work, the analytical calculations and demonstrations are performed by using Green’s function approach, the experimental verifications are realized by means of coaxial cables operating in the radio frequency range and the numerical simulations are obtained using the finite element method via Comsol Multiphysics software.
Published: 2022

9. Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Author: Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis, Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was supported by the French National Grant (No. ANR-17-CE05-00131) within the project called BREAKUP and (No. ANR-11-LABX-0014) representing GaNeX: the 'Investissements d’Avenir.', Renatech Network, PCMP CHOP, CMNF, ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017), and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Physics and Astronomy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract: Despite a high lateral breakdown voltage above 10 kV for large contact distances and a breakdown field of 5 MV cm−1 for short contact distances, an Al0.9Ga0.1N/GaN heterostructure with an 8 nm strained GaN channel grown on an AlN/sapphire template suffers from a low and anisotropic mobility. This work deals with a material study to elucidate this issue. Threading dislocations were observed along the growth direction in transmission electron microscopy pictures and are more in number in the (11−20) plane. Steps were also detected in this plane at the GaN channel interfaces. With the help of device simulations and static characterizations, the deep level transient spectroscopy technique allowed five traps located in the GaN channel to be identified. Most of them are associated with nitrogen- or gallium-vacancy-related defects and are expected to be localized at the interfaces of GaN with the buffer and the barrier. It is likely that these electrically active defects contribute to reduce the mobility in the two-dimensional electron gas. In addition, a link was established between the mobility and the dependence of the quality of the channel interfaces on the crystallographic orientation.
Published: 2022

10. High speed, antenna-enhanced 10.3μm quantum cascade detector

Author: G. Quinchard, C. Mismer, M. Hakl, J. Pereira, Q. Lin, S. Lepillet, V. Trinité, A. Evirgen, E. Peytavit, J. L. Reverchon, J. F. Lampin, S. Barbieri, A. Delga, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), This work was partially supported by the French National Research Agency, and Direction Générale de l’Armement (project HISPANID), Nord-Pas de Calais Regional Council, Fonds Européens de Développement Régional, RENATECH (French Network of Major Technology Centres), and CPER 'Photonics for Society.', Renatech Network, PCMP CHOP, and ANR-17-ASTR-0008,Hispanid,Détecteur infrarouge hétérodyne haute fréquence(2017)
Subjects: Photovoltaics, Photonic materials, RC circuits, Physics and Astronomy (miscellaneous), Photoconductivity, Optical communications, Lasers, Photodetectors, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Infrared photodetector, Waveguides, Electronic band structure, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience; The strong potential of intersubband detectors in the field of mid-infrared photodetection places this technology as a relevant alternative to HgCdTe detectors in the race for ultrafast operation. While their extremely short photocarrier's lifetime opens up possibilities of detection beyond 100 GHz, it is also the main reason for their comparatively high dark current. Here, a photovoltaic quantum cascade detector at 10.3 μm, embedded in a metal–metal patch antenna is presented in both direct and heterodyne detection schemes. In DC, a responsivity of 122 mA/W at 77 K and 85 mA/W at 295 K is reached. More strikingly, the device shows temperature independent heterodyne response with a capacitance-limited cutoff frequency of 25 GHz both at 77 K and room temperature. It is modeled quantitatively by means of an equivalent RC-circuit picture stemming from microscopic transport considerations.
Published: 2022

11. Indirect NMR detection via proton of nuclei subject to large anisotropic interactions, such as 14N, 195Pt, and 35Cl, using the T-HMQC sequence

Author: Racha Bayzou, Julien Trébosc, Ivan Hung, Zhehong Gan, Olivier Lafon, Jean-Paul Amoureux, Université de Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS], Université de Lille, Sciences et Technologies, National High Magnetic Field Laboratory [NHMFL], Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181, Bruker, Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Institut Michel Eugène Chevreul - FR 2638 (IMEC), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), National High Magnetic Field Laboratory (NHMFL), Florida State University [Tallahassee] (FSU), and ANR-18-CE08-0015,ThinGlass,Amélioration raisonnée de la conductivité des films minces de LiPON en élucidant leur structure à l'échelle atomique(2018)
Subjects: [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, General Physics and Astronomy, Physical and Theoretical Chemistry
Abstract: International audience; Recently, the T-hetero-nuclear multiple quantum coherence (T-HMQC) sequence using the TRAPDOR (transfer of population in double resonance) recoupling has been introduced for the indirect detection via protons of quadrupolar nuclei with spin I = 1 (14N) or 3/2 (35Cl) in solids at fast magic-angle spinning (MAS). The sequence is simple as it only uses four rectangular pulses and exhibits low t1-noise because the recoupling pulses are applied to the indirectly detected isotope, I. We demonstrate that this sequence is applicable for the detection via protons of spin-1/2 nuclei subject to large chemical shift anisotropy, such as 195Pt. We also report the proton detection of double-quantum (2Q) coherences of 14N nuclei using this sequence. This 2Q version is more robust to the adjustment of the magic angle and the instabilities of the MAS frequencies than its parent single-quantum (1Q) version since the 2Q coherences are not broadened by the first-order quadrupole interaction. In practice, than its 1Q counterpart for the indirect detection of 14N nuclei, the 2Q variant benefits from a slightly higher resolution and comparable sensitivity. In this article, we derive for the first time the Hamiltonian that describes the spin dynamics during the TRAPDOR recoupling. This Hamiltonian demonstrates the importance of the adiabaticity parameter as well as the role of third-order terms in the effective Hamiltonian. The effects of offsets, radio-frequency field, and recoupling time on the efficiency of the T-HMQC sequence are analyzed numerically as well as with experimental detection via protons of 195Pt nuclei in a mixture of cis- and trans-platin and that of 14N and 35Cl isotopes in l-histidine HCl.
Published: 2022

12. A perspective on elastic metastructures for energy harvesting

Author: Zhihui Wen, Wan Wang, Abdelkrim Khelif, Bahram Djafari-Rouhani, Yabin Jin, Tongji University, School of Aerospace Engineering and Applied Mechanics, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Physique - IEMN (PHYSIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and This work was supported by the National Key R&D Program of China (Grant No. 2020YFA0211402), the National Natural Science Foundation of China (Grant No. 11902223), the Shanghai Science and Technology Committee (Grant No. 21JC1405600), the program for professor of special appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, the Fundamental Research Funds for the Central Universities, and High-Level of Foreign Expert Program of Tongji University.
Subjects: [SPI]Engineering Sciences [physics], Physics and Astronomy (miscellaneous)
Abstract: International audience; Rapid advances have been made in the properties of metastructures, including phononic crystals, metamaterials, and metasurfaces, with respect to their robustness, high power density, and broadband behavior. This presents unique advantages for energy harvesting devices to meet the demands for technology upgrades in various applied science and engineering applications such as wireless sensors, MEMS, and wearable devices. We provide a systematic overview of the mechanisms underlying the above properties, considering different configurations of wave localization in elastic metastructures for energy harvesting purposes. The energy localization can result from cavity modes, topologically protected edge/cavity modes, chiral edge mode, focusing effects, among others. Finally, we give the prospects of energy harvesting metastructures such as the introduction of nonlinear design, time-modulation, machine learning inverse design, and nonlocal effects.
Published: 2022

13. Temperature biosensor based on triangular lattice phononic crystals

Author: Laurent Carpentier, Bahram Djafari-Rouhani, Ahmed Mehaney, Mansour Zaremanesh, Hamed Gharibi, Yan Pennec, A. Gueddida, Ralf Lucklum, Ali Bahrami, Recherche Interdisciplinaire en Management et Économie Lab - ULR 7396 (RIME-Lab), Université d'Artois (UA)-Université de Lille, University of Isfahan, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Institute for Micro and Sensor Systems, Otto-von-Guericke-University Magdeburg (IMSS), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), national French agency Grant No. ANR-18-CE92-0023 and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) for supporting this work in the frame of the project 'Tubular Bell,' under Grant Nos. VE 483/2-1 and LU 605/22-1., ANR-18-CE92-0023,Tubular Bell,Cristal phononique tubulaire pour l'analyse (bio)chimique en phase liquide(2018), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Subjects: Waveguide (electromagnetism), Materials science, Band gap, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, Tungsten, 01 natural sciences, Crystal, [SPI]Engineering Sciences [physics], Quality (physics), 0103 physical sciences, Acoustical properties, General Materials Science, Hexagonal lattice, 010302 applied physics, Chemical properties, Viscosity, business.industry, General Engineering, 021001 nanoscience & nanotechnology, Phononic crystal, Biosensors, chemistry, Optoelectronics, Group velocity, 0210 nano-technology, business, Biosensor, Elastic modulus, Acoustic sensors
Abstract: International audience; A two-dimensional triangular lattice solid/fluid phononic crystal (PnC) is proposed as a sensitive biosensor to detect the temperature of the Methyl Nonafluorobutyl Ether (MNE) in the range of 10-40 degrees C. Temperature changes in MNE represent an important issue for its various applications. Indeed, the MNE is widely used in cosmetic and beauty products for its non-toxic, non-flammable, and colorless chemical properties. For this purpose, a sensitive biosensor for temperature and physical properties of MNE appears necessary. The PnC biosensor consists of a triangular lattice of tungsten cylinders embedded in an epoxy background inside of which a line of hollow cylinders filled with MNE is introduced as a waveguide for guiding resonant modes with low group velocity. We show that the PnC biosensor provides sharp guided modes in the bandgap with high quality factors and frequencies depending on the MNE temperature with high sensitivity. The introduction of damping inside the liquid shows that the shear viscosity, compared to longitudinal, affects drastically the amplitude of the resonant peaks. However, the length of the waveguide can be adapted so as to recover the resonant peak in the presence of viscosities.
Published: 2021

14. Validation of a purely elastic model and a finite element model for a screw press

Author: MULL, Jean-François, DURAND, Camille, BAUDOUIN, Cyrille, BIGOT, Régis, BORSENBERGER, Marc, Laboratoire de Conception Fabrication Commande (LCFC), Université de Lorraine (UL)-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), L2EP - Équipe Outils et Méthodes Numériques (OMN), Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697 (L2EP), Centrale Lille-Université de Lille-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Arts et Métiers Sciences et Technologies, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Manoir Industries, and Région Grand EstManoir Industries Bouzonville
Subjects: static elastic, business.product_category, model, Computer science, finite element simulation, Mécanique [Sciences de l'ingénieur], screw press, Génie des procédés [Sciences de l'ingénieur], Mécanique: Matériaux et structures en mécanique [Sciences de l'ingénieur], [SPI.MECA.MSMECA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Materials and structures in mechanics [physics.class-ph], Mechanics, [SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph], Finite element method, Screw press, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, business
Abstract: The increasing use of superalloys in the industry brings new issues to forging manufacturers concerning Finite Element analysis of the forming process. Once we consider high performing materials, significant differences can occur between numerical and experimental results. The lack of knowledge about materials and thermal exchanges explains a part of these differences but it has been shown that the machine behavior has a significant impact on the forging process. Press modelling is a way to quantify the energy dissipated in the machine structure and improve simulations. This study is a first step in the screw press modelling. Starting from an approximation of the press geometries, a purely static elastic (PSE) model is developed and a numerical simulation considering only uprights is performed. Uprights stiffness predictions from the PSE model and the FE simulation are compared and the PSE model is validated. Then, the press is approximated by a portal frame and FE simulation is realized to determined uprights stiffness by considering links effects and bending behaviors in the structure. Comparison with experimental results validates the approximation. région Grand Est Manoir Industrie Bouzonville
Published: 2019

15. Propagation and attenuation of Rayleigh and pseudo surface waves in viscoelastic metamaterials

Author: Xiaoying Zhuang, Yabin Jin, Runcheng Cai, Timon Rabczuk, Bahram Djafari-Rouhani, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Physique - IEMN (PHYSIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), 19PJ1410100, National Natural Science Foundation of China, NSFC: 11902223, and This work was supported by the National Natural Science Foundation of China (No. 11902223), the National Ten-Thousand Young Talent Programme, the Shanghai Pujiang Program (No. 19PJ1410100), the program for professor of special appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, the Fundamental Research Funds for the Central Universities, the High-Level Foreign Expert Program of Tongji University, and the Shanghai municipal peak discipline program (No. 2019010106).
Subjects: Surface (mathematics), Acoustics, Theoretical approach, Physics::Optics, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, Viscoelasticity, symbols.namesake, 0103 physical sciences, Rayleigh wave, Rayleigh scattering, Complex band structures, Electronic band structure, Seismology, Research interests, [PHYS]Physics [physics], 010302 applied physics, Physics, Viscoelastic effects, Attenuation, Metamaterial, Soft coating, Band structure, Elastic surfaces, Surface waves, 021001 nanoscience & nanotechnology, Propagation properties, Surface wave, Metamaterials, symbols, Transmission spectrums, 0210 nano-technology
Abstract: International audience; The development of seismic metamaterials has attracted much research interest in the past decade. Efforts have been made by using experimental and theoretical approaches to isolate buildings and structures susceptible to elastic surface wave damage. However, most seismic metamaterials were designed without considering the viscoelastic effect that widely exists in nature. In this work, we investigate the propagation and attenuation of the Rayleigh and pseudo surface waves (PSWs) in two types of viscoelastic seismic metamaterials, namely, pillared and inclusion-embedded metamaterials, by analyzing the complex band structures and transmission spectra. The complex band structure developed in this work reveals for the first time the existence of PSWs and their propagation properties in inclusion-embedded metamaterials at the surface. These PSW modes are hidden in the traditional ω(k) technique, therefore showing the usefulness of the complex band structure approach. Introducing viscosity to the substrate of both types of seismic metamaterials will enhance the attenuation of both the Rayleigh wave and PSW. For inclusion-embedded metamaterials, the viscoelastic effect in the soft coating layer can have a specific influence only on the PSW. PSWs show advantages to minimize the relative attenuating effect in general. The results in this work will open up great possibilities for designing and optimizing seismic metamaterials in practice.
Published: 2021

16. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

Author: V. Talbo, Sylvain Bollaert, Beatriz G. Vasallo, Y. Lechaux, Tomas Gonzalez, N. Wichmann, Javier Mateos, Laboratory of Quantum Theory (GT), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Monte Carlo method, General Physics and Astronomy, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Gallium arsenide, chemistry.chemical_compound, law, Low-power electronics, 0103 physical sciences, MOSFET, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Quantum tunnelling, 010302 applied physics, business.industry, PIN diode, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, Impact ionization, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Voltage
Abstract: III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices for low-power digital applications. To assist the development of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization processes and band-to-band tunneling is presented. The MC simulator reproduces the I-V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes, in which tunneling emerges for lower applied voltages than impact ionization events, thus being appropriate for TFETs. When the structure is enlarged up to 200 nm, the ON-state is achieved by means of impact ionization processes; however, the necessary applied voltage is higher, with the consequent drawback for low-power applications. In InAs PIN ungated structures, the onset of both impact ionization processes and band-to-band tunneling takes place for similar applied voltages, lower than 1 V; thus they are suitable for the design of low-power I-...
Published: 2018

17. Crystallinity, surface morphology, and magnetic properties of La0.7Sr0.3MnO3 thin films: An approach based on the laser ablation plume range models

Author: Wilfrid Prellier, Anne-Marie Haghiri-Gosnet, M. Koubaa, Rachel Desfeux, Ph. Lecoeur, B. Mercey, Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Matériaux.Sfax 3000, Tunisia., Université de Sfax - University of Sfax, Laboratoire de Microstructures et de Microélectronique (L2M), Centre National de la Recherche Scientifique (CNRS), UCCS Équipe Couches Minces & Nanomatériaux, Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), and Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], Shock wave, Materials science, Laser ablation, Condensed matter physics, Analytical chemistry, General Physics and Astronomy, [CHIM.MATE]Chemical Sciences/Material chemistry, Substrate (electronics), Epitaxy, Microstructure, Pulsed laser deposition, Crystallinity, [CHIM]Chemical Sciences, Thin film, ComputingMilieux_MISCELLANEOUS
Abstract: We report on a systematic investigation of the influence of pulsed laser deposition (PLD) parameters upon the microstructure, surface morphology, and magnetic properties of La0.7Sr0.3MnO3 (LSMO) thin films grown on (100) SrTiO3 substrates. The optimization of the physical properties requires a careful exploration of the main parameters such as the oxygen pressure P and the target-to-substrate distance D. We show that there is a strong correlation between both these parameters and an optimal distance (D=L0), which can be calculated from a PD3 scaling law (in accordance with a shock wave model). This particular value L0 corresponds to the distance for which all species are thermalized in the plume. In the D–P diagram, L0 defines two distinct regions for the morphology and the microstructure: (i) when D 1 μm) morphology. These films are perfectly epitaxial on the substrate, single-phase and not relaxed. (ii) When D≫L0, the films are colum...
Published: 2003

18. High temperature gradient nanogap-Pirani micro-sensor with maximum sensitivity around atmospheric pressure

Author: Eric Garnier, Romain Viard, Alain Merlen, Omar Elmazria, M. Moutaouekkil, Q. Gallas, Philippe Pernod, Abdelkrim Talbi, Cécile Ghouila-Houri, ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Fluiditech (Thurmelec), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Lille], ONERA, ONERA - The French Aerospace Lab [Meudon], Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), and Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN)
Subjects: Physics and Astronomy (miscellaneous), CAPTEUR PIRANI, Analytical chemistry, CAPTEUR PRESSION MEMS, 02 engineering and technology, Pirani sensor, 01 natural sciences, Temperature measurement, law.invention, law, Nanosensor, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Silicon oxide, 010302 applied physics, Atmospheric pressure, business.industry, Chemistry, 021001 nanoscience & nanotechnology, Pressure sensor, MEMS pressure sensors, Flow control, Temperature gradient, Surface micromachining, Pressure measurement, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; This letter describes and discusses the design and testing of an effcient nanogap Pirani micro-sensor for pressure measurements in a wide range with a maximum sensitivity around atmospheric pressure. The structure combines a substrate-free heated wire and mechanical support using silicon oxide micro-bridges allowing both a constant nanoscale gap between the wire and the substrate and a 1 mm long and 3 µm wide wire. The high aspect ratio of wire provides a uniform heating profile along the wire and contributes to low pressure detection. At the opposite, both the nanoscale gap and the short wire length between two micro-bridges contributes to shift the high pressure limit. Tested between 10 kPa and 800 kPa, the sensor presents a wide measurement range, not fully reached by the experiments, with a maximum of sensitivity close to the atmospheric pressure and performances with up to 38 %/dec sensitivity when operation in constant temperature mode with an overheat of 20 °C.
Published: 2017

19. Second-order sound field during megasonic cleaning of patterned silicon wafers: Application to ridges and trenches

Author: Olivier Vasseur, Jérôme, Deymier, P., Vasseur, J., Khelif, A., Raghavan, S., Acoustique - IEMN, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Department of Materials Science and Engineering, University of Arizona, Génie industriel alimentaire (GENIAL), Institut National de la Recherche Agronomique (INRA)-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Institut National Agronomique Paris-Grignon (INA P-G)-Ecole Nationale Supérieure des Industries Agricoles et alimentaires, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Ex-IMD, Acoustique - IEMN (ACOUSTIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Institut National de la Recherche Agronomique (INRA)-Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Institut National Agronomique Paris-Grignon (INA P-G)-Ecole Nationale Supérieure des Industries Agricoles et alimentaires, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Silicon, business.industry, Megasonic cleaning, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Acoustic wave, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], Wavelength, Optics, chemistry, 0103 physical sciences, Trench, Wafer, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Excitation, Pressure gradient
Abstract: We report calculations of first-order pressure and second-order pressure gradient fields in the neighborhood of patterned silicon wafers. The patterned wafers consist of a single ridge and two parallel ridges separated by a trench on a planar substrate. The efficacy of megasonic waves for cleaning patterned wafers contaminated with micron to submicron silica particles is discussed by comparing a removal force arising from the second-order pressure gradient to a van der Waals adhesion force. The calculated second-order pressure gradient fields show that acoustic energy may be concentrated in small volumes in the vicinity of pattern features with dimensions significantly smaller than the wavelength of the incident acoustic wave. The angle the incident acoustic wave makes with the planar substrate has a strong impact on the second-order pressure gradient field. Grazing incident waves appear to provide a more efficient way of cleaning inside a trench. Excitation of a trench resonant vibrational mode enhances ...
Published: 2001

20. Transport properties of multigrained nanocomposites with imperfect interfaces

Author: Pier Luca Palla, Stefano Giordano, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS-IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Physique - IEMN (PHYSIQUE - IEMN), and Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN)
Subjects: Nanocomposite, Materials science, Silicon, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Thermal conductivity, chemistry, Electrical resistivity and conductivity, 0103 physical sciences, Thermal, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Crystallite, 010306 general physics, 0210 nano-technology, Nanoscopic scale, ComputingMilieux_MISCELLANEOUS
Abstract: Multigrained or polycrystalline composite materials have attracted a considerable attention due to their potential applications as advanced materials with outstanding thermal, mechanical, and electromagnetic properties. When the grains' morphology is displayed at the nanoscopic scale, the presence of imperfect interfaces plays a central role in determining the effective transport properties. Therefore, we develop here a self-consistent effective medium theory able to evaluate the influence of real contacts between the different phases of multigrained composite materials. This approach takes into account the classical interface schemes that have been introduced in literature, namely, the low and the high conducting interface models. The theoretical results have been compared with numerical and experimental data concerning the thermal conductivity of (1−x)Si:xGe mixtures and the electrical conductivity of (1−x)Li2O:xB2O3 composites.
Published: 2016

21. Statistics of silicate units in binary glasses

Author: Anuraag Gaddam, José M.F. Ferreira, Lionel Montagne, Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centrale Lille Institut (CLIL)-Université d'Artois (UA)-Centrale Lille-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Lille, Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)
Subjects: Nucleation, General Physics and Astronomy, Thermodynamics, Mineralogy, 02 engineering and technology, FORMING LIQUIDS, 01 natural sciences, Crystal, chemistry.chemical_compound, 0103 physical sciences, SPECTRA, NETWORK, NUCLEAR-MAGNETIC-RESONANCE, Physical and Theoretical Chemistry, Spectroscopy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Relaxation (NMR), [CHIM.MATE]Chemical Sciences/Material chemistry, Nuclear magnetic resonance spectroscopy, Statistical mechanics, 021001 nanoscience & nanotechnology, NMR, Silicate, Condensed Matter::Soft Condensed Matter, Grand canonical ensemble, chemistry, 0210 nano-technology
Abstract: In this paper, we derive a new model to determine the distribution of silicate units in binary glasses (or liquids). The model is based on statistical mechanics and assumes grand canonical ensemble of silicate units which exchange energy and network modifiers from the reservoir. This model complements experimental techniques, which measure short range order in glasses such as nuclear magnetic resonance (NMR) spectroscopy. The model has potential in calculating the amounts of liquid-liquid phase segregation and crystal nucleation, and it can be easily extended to more complicated compositions. The structural relaxation of the glass as probed by NMR spectroscopy is also reported, where the model could find its usefulness. Published by AIP Publishing.
Published: 2016

22. Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

Author: N. Wichmann, Sylvain Bollaert, A. B. Fadjie-Djomkam, Y. Lechaux, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work has been supported by the Agence Nationale de la Recherche through the Project No. ANR-13-JS03-0001-01. This work was developed in IEMN's cleanroom, a part of the French National Fabrication Network (RENATECH), Renatech Network, ANR-13-JS03-0001,I-MOS35,MOSFET à ionisation par impact à base de matériaux III-V à faible bande interdite pour une logique basse tension d'alimentation(2013), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: X-ray photoelectron spectroscopy, Materials science, Physics and Astronomy (miscellaneous), Passivation, Annealing (metallurgy), Plasma processing, Electrical properties and parameters, Analytical chemistry, Oxide, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Oxygen, Annealing, [SPI.MAT]Engineering Sciences [physics]/Materials, Metal, chemistry.chemical_compound, Band gap, 0103 physical sciences, Gate stack, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, Capacitance voltage profiling, Plasma, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, Semiconductor, Semiconductors, chemistry, Chemical elements, visual_art, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], visual_art.visual_art_medium, Metal oxides, 0210 nano-technology, business
Abstract: International audience; Capacitance-voltage (C-V) measurements and x-ray photoelectron spectroscopy (XPS) analysis were performed in order to investigate the effect of a oxygen (O2) plasma after oxide deposition on the Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor structure passivated with ammonia NH4OH solution. From C-V measurements, an improvement of charge control is observed using the O2 plasma postoxidation process on In0.53Ga0.47As, while the minimum of interface trap density remains at a good value lower than 1 × 1012 cm−2 eV−1. From XPS measurements, we found that NH4OH passivation removes drastically the Ga and As native oxides on the In0.53Ga0.47As surface and the O2 plasma postoxidation process enables the reduction of interface re-oxidation after post deposition annealing (PDA) of the oxide. The advanced hypothesis is the formation of interfacial barrier between Al2O3 and In0.53Ga0.47As which prevents the diffusion of oxygen species into the semiconductor surface during PDA.
Published: 2016

23. Low field anisotropic magnetostriction of single domain exchange-coupled (TbFe/Fe) multilayers

Author: F. Socha, Philippe Pernod, Nicolas Tiercelin, H. Le Gall, J. Ben Youssef, Vladimir Preobrazhensky, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de magnétisme de Bretagne (LMB), Université de Brest (UBO)-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Materials science, Magnetic domain, Condensed matter physics, General Physics and Astronomy, Magnetostriction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], Magnetization, Magnetic anisotropy, Flexural strength, 0103 physical sciences, Single domain, 0210 nano-technology, Anisotropy, Saturation (magnetic)
Abstract: International audience; Giant magnetostriction (GMS) reported until now in exchange-coupled multilayers (ECML) present quasi-isotropic magnetostrictive behavior. In the present work it is shown the possibility to induce highly anisotropic GMS at low field with the single domain state in (TbFe/Fe)n multilayers when deposited by ion sputtering under a magnetic polarization field Hd. ECML grown under bias field Hd, applied along the large size of rectangular glass substrates present original magnetic and magnetoelastic (ME) properties associated with strong uniaxial behavior. After saturation by an external field H∥ applied parallel to the easy axis induced by Hd, a single domain state is kept by decreasing H∥ down to zero (Mr/Ms=1) which explains why there is no change of the magnetoelastic coefficient bγ,2 by increasing or decreasing H∥. A different behavior arises along the hard magnetization axis with a strong change of bγ,2 by increasing H∥ up to the saturation. ME anisotropy is the origin of high amplitude flexural and torsional oscillation modes as observed in our ECML
Published: 2000

24. Modeling and de-embedding the interferometric scanning microwave microscopy by means of dopant profile calibration

Author: Jean-Michel Hartmann, Nicolas Chevalier, Didier Theron, Romolo Marcelli, L. Michalas, C. Brillard, Fei Wang, Istituto per la Microelettronica e Microsistemi [Roma] (IMM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nano and Microsystems - IEMN (NAM6 - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Physics and Astronomy (miscellaneous), Dopant, business.industry, Antenna aperture, Radius, [SPI.MAT]Engineering Sciences [physics]/Materials, Interferometry, Optics, Amplitude, Microscopy, Calibration, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, Microwave
Abstract: International audience; This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obtained S11 amplitudes based on the proposed model confirms the validity of the methodology. As a specific finding, changes in the tip radius between new and used tips have been clearly identified, leading to values for the effective tip radius in the range of 45 nm to 85 nm, respectively. Experimental results are also discussed in terms of the effective area concept, taking into consideration details related to the nature of tip-to-sample interaction.The authors wish to acknowledge the support from EC by means of “Marie Curie” fellowship in the framework of PEOPLE-2012-ITN project: Microwave Nanotechnology for Semiconductor and Life Science—NANOMICROWAVE, under GA: 317116, as well as the Region Nord-Pas-de-Calais for supporting this work under the project CPER CIA research and the National Research Agency (ANR) under the program Equipex (EXCELSIOR project).
Published: 2015

25. Refractive indices and birefringence of hybrid liquid crystal - nanoparticles composite materials in the terahertz region

Author: Jean-François Blach, Janusz Parka, Sébastien Saitzek, Norbert Palka, Malgosia Kaczmarek, Urszula Chodorow, Vasilis Apostolopoulos, Elena Mavrona, M. E. Barnes, UCCS Équipe Couches Minces & Nanomatériaux, Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), and Centrale Lille Institut (CLIL)-Université d'Artois (UA)-Centrale Lille-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Lille-Centrale Lille Institut (CLIL)-Université d'Artois (UA)-Centrale Lille-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Lille
Subjects: Nanocomposite, Materials science, Birefringence, business.industry, Terahertz radiation, Doping, General Physics and Astronomy, Nanoparticle, Ferroelectricity, lcsh:QC1-999, Optics, Liquid crystal, [CHIM.CRIS]Chemical Sciences/Cristallography, [CHIM]Chemical Sciences, Optoelectronics, business, Refractive index, lcsh:Physics, ComputingMilieux_MISCELLANEOUS
Abstract: We show that a hybrid LC-ferroelectric nanoparticle suspension of liquid crystal E7 doped with BaTiO3 nanoparticles leads to 10% increase in birefringence in the THz region of spectrum as compared to pure E7. Doped liquid crystals can be used to increase performance of THz modulators and waveplates. BaTiO3 nanoparticles used in the mixture were synthesised with the sol gel technique, and their refractive index has been measured in THz in powder form and in solution.
Published: 2015

26. Dielectric relaxation analysis of Pb(Zr0.54,Ti0.46)O3 thin films: Electric field dependence

Author: N. Sama, Denis Remiens, Tuami Lasri, Freddy Ponchel, Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut National de la Recherche Scientifique [Québec] (INRS), and Microtechnology and Instrumentation for Thermal and Electromagnetic Characterization - IEMN (MITEC - IEMN)
Subjects: Permittivity, Diffraction, Materials science, Condensed matter physics, Electric field, Relaxation (NMR), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Physics and Astronomy, Dielectric, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Sputter deposition, Thin film, Perovskite (structure)
Abstract: International audience; 350 nm-thick Perovskite PbZr0.54Ti0.46O3 (PZT) thin films were deposited on Al2O3 substrates by sputtering with and without an additional 10-nm-thick TiOx buffer layer. X-ray diffraction patterns showed that in presence of TiOx buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for EDC = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.
Published: 2014

27. Ultra-directional source of longitudinal acoustic waves based on a two-dimensional solid/solid phononic crystal

Author: Pascal Rembert, N. Swinteck, Bruno Morvan, Anne-Christine Hladky-Hennion, R. Sainidou, Pierre A. Deymier, J. O. Vasseur, Alain Tinel, Laboratoire Ondes et Milieux Complexes (LOMC), Centre National de la Recherche Scientifique (CNRS)-Université Le Havre Normandie (ULH), Normandie Université (NU)-Normandie Université (NU), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique - IEMN, Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Le Havre Normandie (ULH), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), and Acoustique - IEMN (ACOUSTIQUE - IEMN)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Physical acoustics, Materials science, Spatial filter, business.industry, Acoustics, General Physics and Astronomy, 02 engineering and technology, Acoustic wave, 021001 nanoscience & nanotechnology, Ion acoustic wave, 01 natural sciences, Collimated light, Optics, 0103 physical sciences, Dispersion (optics), Monochromatic color, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Beam (structure)
Abstract: Phononic crystals (PC) can be used to control the dispersion properties of acoustic waves, which are essential to direct their propagation. We use a PC-based two-dimensional solid/solid composite to demonstrate experimentally and theoretically the spatial filtering of a monochromatic non-directional wave source and its emission in a surrounding water medium as an ultra-directional beam with narrow angular distribution. The phenomenon relies on square-shaped equifrequency contours (EFC) enabling self-collimation of acoustic waves within the phononic crystal. Additionally, the angular width of collimated beams is controlled via the EFC size-shrinking when increasing frequency.
Published: 2014

28. Analysis of the cavitation instabilities with time-resolved stereo and multiplane particle image velocimetry

Author: Kunpeng Long, Mingming Ge, Annie-Claude Bayeul-Lainé, Olivier Coutier-Delgosha, Laboratoire de Mécanique des Fluides de Lille – Kampé de Fériet - UMR 9014 (LMFL), Centrale Lille-ONERA-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), and Virginia Tech [Blacksburg]
Subjects: Fluid Flow and Transfer Processes, Mechanical Engineering, Ultra-high speed imaging, Computational Mechanics, Velocimetry, Sciences de l'ingénieur, Condensed Matter Physics, PIV, instability, [SPI]Engineering Sciences [physics], cavitation, Mechanics of Materials, Cavitation bubbles, flow imaging, Flow dynamics, Flow visualization, re-entrant jet
Abstract: International audience; The present paper is devoted to the analysis of the various instabilities of cavitation attached to a two-dimensional (2D) profile. Time resolved stereo Particle Image Velocimetry (PIV) was conducted in a small-scale 2D venturi type section, in different vertical planes in the streamwise direction, located at varying positions in the depth of the channel. These experiments enabled to obtain the time evolution of the three components of the velocity field in the cavitation area, and to derive the time-averaged gradients in the spanwise direction. Test cases at various Reynolds number were conducted, maintaining either the pressure or the cavitation number constant, to discuss the impact of these parameters on the flow. Then, the attention was focused on three distinct flowdynamics, namely sheet cavitation, where no large-scale instability can be detected, single cloud cavitation, where a large cloud of vapor is shed periodically at the rear of the cavity, and multi-cloud cavitation, where the process is more complex, as more than one clouds are shed downstream. The data reveal that the structure and the structure of the re-entrant jet, which is one of the primary mechanisms of cloud cavitation, is more complex than reported in the previous studies. Although the jet can be detected as an intermittent low speed reverse flow in the streamwise direction, it is actually made of successive vortices about the channel depth, which are convected downstream while expanding in the vertical direction, causing the cavity lift and thus contributing to its final split and the cloud shedding
Published: 2022

29. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Author: Suresh Sundaram, Jean-Paul Salvestrini, Paul L. Voss, Konstantinos Pantzas, David Troadec, Gilles Patriarche, P. L. Bonanno, Y. El Gmili, Zhonghou Cai, G. Orsal, Xiaohang Li, Renaud Puybaret, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Nanostructure, General Physics and Astronomy, chemistry.chemical_element, Hexagonal pyramid, Gallium nitride, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Indium gallium nitride, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Monocrystalline silicon, chemistry.chemical_compound, chemistry, 0103 physical sciences, Nanorod, 0210 nano-technology, Indium
Abstract: International audience; Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150 nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535 nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.
Published: 2014

30. Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

Author: Jun Ge, Xianlin Dong, Genshui Wang, Denis Remiens, Jean Costecalde, Ying Chen, Feng Gao, Fei Cao, Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences [Beijing] (CAS)-Chinese Academy of Sciences [Beijing] (CAS), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], Phase transition, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Ferroelectric ceramics, Polarization (waves), Epitaxy, Energy storage, [SPI.MAT]Engineering Sciences [physics]/Materials, Strain engineering, Electric field, Antiferroelectricity, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Antiferroelectric films
Abstract: International audience; We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3 can be enhanced for the (110) or (111) SrTiO3 substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ~120 kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3 J/cm3 at 700 kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition.
Published: 2014

31. Cross-talk artefacts in Kelvin probe force microscopy imaging: A comprehensive study

Author: Thierry Melin, M. Popoff, Dominique Deresmes, Didier Theron, S. Barbet, H. Diesinger, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d’Infection et d’Immunité de Lille - INSERM U 1019 - UMR 9017 - UMR 8204 (CIIL), Centre National de la Recherche Scientifique (CNRS)-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Université de Lille-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut Pasteur de Lille, Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP), This work has been achieved using the facilities of the EXCELSIOR Nanoscience Characterization Center and of the RENATECH program and was, in part, supported by the French National Research Agency under Contract No. ANR-11-BS10-0004. We thank Dr. Jean-Luc Pellequer (CEA Marcoule, DSV/iBEB/SBTN, F-30207 Bagnols-sur-Cèze, France) for providing us with the TMV sample. M.P. would like to acknowledge Michael Odorico and Professor Pierre Parot and the training school provided by the COST Action TD1002 AFM4NanoMed & Bio., Institut Pasteur de Lille, Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Lille-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Renatech Network, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-11-BS10-0004,NANOKAN,Spectroscopie de charges élémentaires et de moments dipolaires sub-10 Debye sur des systèmes modèles, moléculaires ou à l'état solide(2011), IEMN, Collection, Equipements d'excellence - Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge. - - Excelsior2011 - ANR-11-EQPX-0015 - EQPX - VALID, and BLANC - Spectroscopie de charges élémentaires et de moments dipolaires sub-10 Debye sur des systèmes modèles, moléculaires ou à l'état solide - - NANOKAN2011 - ANR-11-BS10-0004 - BLANC - VALID
Subjects: Kelvin probe force microscope, Cantilever, Atomic force microscopy, business.industry, Projection angle, Chemistry, General Physics and Astronomy, Ambient air, Optics, [PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Microscopy, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Gold surface, business, Excitation
Abstract: We provide in this article a comprehensive study of the role of ac cross-talk effects in Kelvin Probe Force Microscopy (KPFM), and their consequences onto KPFM imaging. The dependence of KPFM signals upon internal parameters such as the cantilever excitation frequency and the projection angle of the KPFM feedback loop is reviewed, and compared with an analytical model. We show that ac cross-talks affect the measured KPFM signals as a function of the tip-substrate distance, and thus hamper the measurement of three-dimensional KPFM signals. The influence of ac cross-talks is also demonstrated onto KPFM images, in the form of topography footprints onto KPFM images, especially in the constant distance (lift) imaging mode. Our analysis is applied to unambiguously probe charging effects in tobacco mosaic viruses (TMVs) in ambient air. TMVs are demonstrated to be electrically neutral when deposited on silicon dioxide surfaces, but inhomogeneously negatively charged when deposited on a gold surface. © 2014 AIP Publishing LLC
Published: 2014

32. How imperfect interfaces affect the nonlinear transport properties in composite nanomaterials

Author: Fabio Pavanello, Stefano Giordano, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: education.field_of_study, Nanocomposite, Materials science, business.industry, Composite number, Population, General Physics and Astronomy, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Matrix (mathematics), Nonlinear system, Thermal conductivity, Photovoltaics, 0103 physical sciences, Electronics, Statistical physics, 010306 general physics, 0210 nano-technology, education, business
Abstract: Nanomaterials composed of a population of particles dispersed in a matrix represent the building block for the next generation of several technologies: energy storage and conversion, thermal management, electronics, and photovoltaics. When interfaces between particles and matrix are imperfect, the size of the particles may strongly influence the effective linear and nonlinear response of the whole system. Here, we study these scale effects mainly focussing on the nonlinear transport behavior of composite structures. The theory is developed, in the framework of the electrical conductivity, for an arbitrary nonlinearity of the constituents; however, explicit results are discussed for Kerr-like nonlinear responses. Two kinds of imperfect interfaces are considered: the T-model and the Π-model, which represent a generalization of the classical schemes largely employed in literature, namely the low and the high conducting interface models. The dependence of the nonlinear effective properties on the size of the dispersed particles is explained through intrinsic length scales governing some universal scaling laws.
Published: 2013

33. Surface wettability of titania thin films with increasing Nb content

Author: Abdullah Yildiz, Mihaela Irimia, Nicoleta Cornei, Alina Manole, Dumitru Luca, Catalin Adomnitei, Marius Dobromir, Diana Mardare, Mihaela Girtan, Laboratoire de Photonique d'Angers (LPHIA), Université d'Angers (UA), Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Centrale Lille Institut (CLIL)-Université d'Artois (UA)-Centrale Lille-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Lille, and Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Spin coating, Materials science, Band gap, Analytical chemistry, General Physics and Astronomy, 02 engineering and technology, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Amorphous solid, Contact angle, X-ray photoelectron spectroscopy, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Wetting, Thin film, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: TiO2 and TiO2/Nb amorphous thin films were grown on glass substrates by a sol-gel technique (spin coating). Films' surface composition, structure, and morphology were derived from x-ray photoelectron spectroscopy, x-ray diffraction, and atomic force microscopy data. The investigated films showed a smooth surface (roughness values below 5 nm). A separate surface wettability investigation showed that by increasing the Nb amount in pristine titania films results in a decrease of contact angle (CA) values from 40° to nearly 0°, thus, indicating a super-hydrophilic conversion under UV illumination. This conversion rate is greatly enhanced by increasing the Nb content, the surface super-hydrophilic behavior occurring after a couple of minutes in the TiO2/Nb samples, but after 4 h in the pristine titania specimen. The current results are discussed in terms of the optical band gap shift towards higher energies, by increasing the Nb content in the films, a process explained based on small polaron hopping model.
Published: 2012

34. Erratum: 'Enhanced directional optical transmission' [Appl. Phys. Lett. 93, 043114 (2008)]

Author: L. Dobrzynski, A. Akjouj, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université Lille Nord (France)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Light transmission, Materials science, Physics and Astronomy (miscellaneous), business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], Transmission (telecommunications), 0103 physical sciences, Optoelectronics, 0210 nano-technology, business
Abstract: International audience
Published: 2012

35. Optical characterization of polychromatic organic light emitting diodes

Author: David Troadec, Rémy Antony, André Moliton, Bernard Ratier, Roger C. Hiorns, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Unité de Microélectronique, Optoélectronique et Polymères (UMOP), Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), Physico-chimie des polymères (PCP), Centre National de la Recherche Scientifique (CNRS)-Université de Pau et des Pays de l'Adour (UPPA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Université de Pau et des Pays de l'Adour (UPPA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Total internal reflection, Materials science, business.industry, General Physics and Astronomy, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Electroluminescence, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Luminance, Characterization (materials science), 010309 optics, Optics, Yield (chemistry), 0103 physical sciences, OLED, Optoelectronics, Monochromatic color, 0210 nano-technology, business, Quantum
Abstract: International audience; Luminance and quantum yields of organic light emitting diodes (OLEDs) are generally calculated by using a hypothetic monochromatic emission even though the actual external emission is lower than the internal emission because of internal reflection, and is polychromatic. For organic materials, we present the effects of the total internal reflection on quantum yields. Calculations for the luminance and the efficiency of an ideal pseudomonochromatic source are compared with those for a real polychromatic source. While we demonstrate that the calculation of the yield is practically unchanged whatever hypothesis is used, we do show, however, that by assuming that the source is pseudomonochromatic, the luminances of green and blue OLEDs are overvalued or undervalued by a factor of 4, respectively.
Published: 2005

36. Experimental investigation of internal two-phase flow structures and dynamics of quasi-stable sheet cavitation by fast synchrotron x-ray imaging

Author: Guangjian Zhang, Ilyass Khlifa, Kamel Fezzaa, Mingming Ge, Olivier Coutier-Delgosha, Laboratoire de Mécanique des Fluides de Lille – Kampé de Fériet - UMR 9014 (LMFL), Centrale Lille-ONERA-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Sciences et Technologies, HESAM Université (HESAM)-HESAM Université (HESAM), ONERA [Modane], ONERA, Argonne National Laboratory, Lemont, Illinois, USA, Kevin T.Crofton Department of Aerospace and Ocean Engineerong, Virginia, USA, and HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)
Subjects: [PHYS]Physics [physics], Fluid Flow and Transfer Processes, Physics, Cavitation, Opacity, Turbulence, Velocity gradient, Mechanical Engineering, Flow (psychology), Computational Mechanics, Mechanics, Condensed Matter Physics, 01 natural sciences, 010305 fluids & plasmas, Mechanics of Materials, Flow structure, Venturi effect, 0103 physical sciences, Shear stress, Two-phase flow, 010306 general physics
Abstract: International audience; The quasi-stable sheet cavitation produced in a small Venturi channel is investigated using a fast synchrotron X-ray imaging technique aided with conventional high speed photography. The use of X-rays instead of visible light solves cavitation opacity related issues, and X-ray phase contrast-based edge enhancement enables high-definition visualization of the internal two-phase morphology. The simultaneous acquisition of time-resolved velocity and void fraction fields through post-processing the recorded X-ray images reveals, for the first time, the complex diphasic flow structures inside the sheet cavity, which is essentially divided into 6 characteristic parts. Distinct from the current mainstream view, the globallysteady sheet cavitation is found to be characterized by a weak but constantly-existing re-entrant flow that can penetrate the entire cavity. The turbulent velocity fluctuations inside the sheet cavity are also investigated. The turbulence level in the reverse flow region is observed to be as low as in the outer main flow demonstrating the relatively steady status of the reentrant flow. Unlike the streamwise and cross-stream fluctuations, the shear stress appears to be weakly correlated with the velocity gradient. The collapse of vapor phase and the vaporization at the upstream cavity interface are found to be the primary causes of shear stress intensification.
Published: 2020

37. InP double heterojunction bipolar transistors for terahertz computed tomography

Author: Olivier Strauss, Alexandre Duhant, Muriel Riet, Wojciech Knap, Nina Dyakonova, Meriam Triki, Virginie Nodjiadjim, Agnieszka Konczykowska, Dominique Coquillat, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Terakalis, Image & Interaction (ICAR), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), and THALES-ALCATEL
Subjects: External circuit, Materials science, Terahertz radiation, General Physics and Astronomy, Computed tomography, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Capacitance, [SPI.AUTO]Engineering Sciences [physics]/Automatic, law.invention, law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, medicine, medicine.diagnostic_test, business.industry, Bipolar junction transistor, Transistor, 020206 networking & telecommunications, Heterojunction, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Optoelectronics, 0210 nano-technology, business, lcsh:Physics, Voltage
Abstract: International audience; We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging.
Published: 2018

38. Calibrated work function mapping by Kelvin probe force microscopy

Author: Benjamin Grévin, Łukasz Borowik, Nicolas Chevalier, Pablo A. Fernández Garrillo, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and We acknowledge Denis Mariolle for helpful discussions. This work was supported by the French 'Recherche Technologique de Base' program.REFERENCES
Subjects: [PHYS]Physics [physics], Kelvin probe force microscope, Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Characterization (materials science), Monocrystalline silicon, Highly oriented pyrolytic graphite, 0103 physical sciences, Microscopy, Calibration, Optoelectronics, Work function, Graphite, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, business, Instrumentation, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; We propose and demonstrate the implementation of an alternative work function tip calibration procedure for Kelvin probe force microscopy under ultrahigh vacuum, using monocrystalline metallic materials with known crystallographic orientation as reference samples, instead of the often used highly oriented pyrolytic graphite calibration sample. The implementation of this protocol allows the acquisition of absolute and reproducible work function values, with an improved uncertainty with respect to unprepared highly oriented pyrolytic graphite-based protocols. The developed protocol allows the local investigation of absolute work function values over nanostructured samples and can be implemented in electronic structures and devices characterization as demonstrated over a nanostructured semiconductor sample presenting Al0.7Ga0.3As and GaAs layers with variable thickness. Additionally, using our protocol we find that the work function of annealed highly oriented pyrolytic graphite is equal to 4.6 ± 0.03 eV.
Published: 2018

39. Near-infrared Fourier transform room-temperature photoluminescence of erbium complexes

Author: Pascal Fias, Laurent Divay, E. Lallier, R. Van Deun, J. Barbillat, P. Le Barny, A. Grisard, Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 (LASIRE), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Centrale Lille Institut (CLIL), Thales Research and Technologies [Orsay] (TRT), THALES, Department of Chemistry, Coordination Chemistry Division, Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), and THALES [France]
Subjects: Lanthanide, Technology and Engineering, Photoluminescence, Materials science, Phenanthroline, Analytical chemistry, Infrared spectroscopy, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, Erbium, chemistry.chemical_compound, symbols.namesake, AMPLIFIERS, ELECTROLUMINESCENCE, Spectroscopy, Instrumentation, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, chemistry, symbols, Optoelectronics, Light emission, 0210 nano-technology, business, Raman spectroscopy
Abstract: A modified Fourier transform (FT) Raman bench spectrometer designed for the detection of weak light emission in the 800–1700 nm wavelength region has been used to demonstrate the advantages of FT spectroscopy for measuring near-infrared photoluminescence spectra of lanthanide complexes with a good resolution and very good sensitivity. This apparatus has been tested with an ultraviolet laser source (325 nm) on three standard erbium complexes. The 4I13/24I15/2 emission of tris-(acetylacetonato) (1,10 phenanthroline) erbium [Er(acac)3(phen)], tris-(4,4,4,-trifluoro-1-(2 thenoyl)-1,3-butenedione) (1,10 phenanthroline) erbium [Er(TTFA)3(phen)] and tris(8-hydroxyquinolinato) erbium [Erq3] has thus been recorded in solution and in the solid state and compared with literature. ©2003 American Institute of Physics.
Published: 2003

40. Two-dimensional phononic crystal with tunable narrow pass band: Application to a waveguide with selective frequency

Author: Jérôme Olivier Vasseur, Leonard Dobrzynski, Abdelkrim Khelif, Bahram Djafari-Rouhani, Pierre A. Deymier, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Department of Materials Science and Engineering, University of Arizona, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire de dynamique et structure des matériaux moléculaires (LDSMM), Université de Lille, Sciences et Technologies-Université du Littoral Côte d'Opale (ULCO)-Centre National de la Recherche Scientifique (CNRS), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Department of Materials Science and Engineering, University of Arizona
Subjects: Materials science, Phonon, Band gap, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, Signal, law.invention, [SPI]Engineering Sciences [physics], Optics, law, 0103 physical sciences, Passband, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], 010302 applied physics, business.industry, Radius, 021001 nanoscience & nanotechnology, Vibration, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, business, Waveguide, Acoustical measurements and instrumentation
Abstract: We study theoretically the propagation of elastic waves in two-dimensional composite media composed of a square array of hollow steel cylinders embedded in water using the finite-difference time-domain method. These composite media constitute a class of acoustic band gap materials with narrow pass bands in their transmission stop bands. The frequency at which the pass band occurs is tunable by controlling the inner radius of the tubular steel inclusions. The effect of the tube inner radius on the transmission spectrum is semiquantitatively separable from the effect of the composite periodicity. A linear defect formed of a row of hollow cylinders in an array of filled cylinders produces an elastic waveguide that transmits at the narrow pass band frequency. We show that two of these tunable waveguides with different inner radii can be employed to filter and separate two specific frequencies from a broad band input signal.
Published: 2003

41. Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor metal-oxide-semiconductor design

Author: M. Le Roy, Didier Lippens, Olivier Vanbésien, E. Lheurette, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Permittivity, Materials science, business.industry, Physics::Optics, General Physics and Astronomy, Heterojunction, 02 engineering and technology, Dielectric, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Nanoelectronics, 0103 physical sciences, MOSFET, Optoelectronics, 0210 nano-technology, business, Quantum tunnelling, High-κ dielectric, Leakage (electronics)
Abstract: Quantum calculations of leakage current through ultrathin dielectric heterostructures are used to propose design criteria for the next generation of metal-oxide-semiconductor devices in a deep submicron technology. By using as input parameters both the dielectric constant and the barrier height of different dielectrics, including at first stage SiO2, Si3N4, TiO2, and Ta2O5, but also such emerging materials as HfO2 and ZrO2, we show that, depending on the voltage range investigated, the hierarchy between those dielectrics is not simply given by the increase of their permittivity. Deeper considerations based on resonant tunneling mechanisms, of prime importance when dielectric heterostructures are used for fabrication purposes, must be taken into account especially for the future low-consumption nanotransistors with operating voltages below 1 V.
Published: 2003

42. Monte Carlo simulation of electron transport in narrow gap heterostructures

Author: Hervé Boutry, Jean-Luc Thobel, F. Dessenne, Olivier Bonno, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Physics, Solid-state physics, Condensed matter physics, Monte Carlo method, General Physics and Astronomy, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Thermal conduction, Schrödinger equation, [SPI]Engineering Sciences [physics], Impact ionization, symbols.namesake, Effective mass (solid-state physics), symbols, Electronic band structure
Abstract: International audience; A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory, which leads to a Schrödinger equation with an energy-dependent effective mass. This equation is solved in a numerically efficient way by including a standard eigenvalue solver in an iterative method. The mixing between conduction and valence band states is taken into account, at an approximate level, through a “Bloch overlap factor,” defined by analogy with the case of three-dimensional transport. This model was applied to a typical AlSb/InAs single well structure, and realistic results were obtained. The important role played by the Bloch overlap factor is demonstrated. When it is neglected, the mobility is strongly underestimated. A more sophisticated double well structure was also investigated. It is intended to reduce impact ionization, thanks to transfer toward the thinner well. This transfer is found to depend strongly on the potential profile
Published: 2002

43. Whether the two-dimensional Eulerian turbulence evolves to a unique final state

Author: Vadim Pavlov, Daniel Buisine, Stéphane Decossin, Laboratoire de Mécanique de Lille - FRE 3723 (LML), Université de Lille, Sciences et Technologies-Ecole Centrale de Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Université de Lille, Sciences et Technologies-Centrale Lille-Centre National de la Recherche Scientifique (CNRS), and Nodot, Marie-Christine
Subjects: Fluid Flow and Transfer Processes, Physics, K-epsilon turbulence model, Turbulence, Mechanical Engineering, Computational Mechanics, Eulerian path, K-omega turbulence model, Plasma, State (functional analysis), Condensed Matter Physics, 01 natural sciences, 010305 fluids & plasmas, Vortex, Physics::Fluid Dynamics, symbols.namesake, Classical mechanics, Mechanics of Materials, 0103 physical sciences, symbols, Relaxation (physics), 010306 general physics
Abstract: The relaxation of two-dimensional Eulerian turbulence to a quasifinal state is studied. We consider the self-organization of localized vortices (in two-dimensional flows) into clusterlike and spiral-like structures and show that quasifinal states do not “forget” conditions of their initial origin. The numerical study confirms a possibility of the “vortex crystals” formation that have been observed in the plasma experiments. We discuss the physical significance of the obtained results.
Published: 2002

44. Ion beam etching of lead–zirconate–titanate thin films: Correlation between etching parameters and electrical properties evolution

Author: Eric Cattan, Caroline Soyer, Maryline Guilloux-Viry, Denis Remiens, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: [PHYS]Physics [physics], Materials science, Ferroelectric ceramics, Analytical chemistry, General Physics and Astronomy, Surface finish, Lead zirconate titanate, Acceleration voltage, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, chemistry, Etching (microfabrication), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Reactive-ion etching, Composite material, Thin film, Current density
Abstract: Ion beam etching of sputtered Pb(Zrx,Ti1-x)O3 (PZT) with x equal to 0.54 thin films grown on Pt/Ti/SiO2/Si substrates has been performed using pure Ar gas. The etch rate dependence on the process parameters (current density, acceleration voltage, gas pressure) has been investigated. The PZT etch rate can reach 600 Å/min with acceleration voltage of 1000 V and current density of 1 mA/cm2. Selectivity ratios between PZT and masks of various natures (photoresist, Pt, Ti) have been evaluated to determine a pertinent material for etching mask. According to our etching conditions, titanium seems to be the best candidate. We evaluated the PZT surface damage by contact mode atomic force microscopy. It appears that the roughness increases after ion bombardment, and that the grain boundary zone is preferentially etched. For some etching parameters, we also observed electrical damage. Carrying out C(V) and hysteresis loops P(E) measurements before and after etching have provided evidence of degradation. We noted a large decrease in permittivity after the etching process irrespective of the current density and acceleration voltage. Ferroelectric damage was illustrated by a large increase in the average coercive field. For each of the electrical properties under study, the same behavior has been observed after etching: the increase of damage was obtained as a function of the current density and acceleration voltage. The evolution of electrical properties when the PZT layer is protected by a metallic mask has also been studied. We observed very slight variations in the electrical properties.
Published: 2002

45. Effects of dislocations on transport properties of two dimensional electron gas. II. The quantum regime

Author: D. Ferré, Z. Bougrioua, J.L. Farvacque, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de structures et propriétés de l'état solide - UMR 8008 (LSPES), and Université de Lille, Sciences et Technologies-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Dislocation creep, Materials science, Condensed matter physics, General Physics and Astronomy, 02 engineering and technology, Landau quantization, Quantum Hall effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, 0103 physical sciences, Substructure, Partial dislocations, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Dislocation, 0210 nano-technology, Anisotropy, Fermi gas
Abstract: International audience; This article deals with the influence of dislocations on the conductivity of two dimensional electron gas measured at helium temperature and at high magnetic field. Two kinds of dislocation substructures have been experimentally studied: they correspond either to a family of parallel dislocation segments introduced by plastic bending or to a family of parallel and long misfit dislocations created during the epitaxial growth by the control of the epilayer thickness. It is shown that both types of dislocation substructure lead to a strong anisotropic behavior of the longitudinal conductivity while the quantum Hall effect is not significantly affected by the presence of dislocations. A theoretical treatment of the case of anisotropic potentials is proposed as a generalization of the simpler case, addressed in the literature, of isotropic (short range) potentials. With the help of this analysis, we can explain, in the case of the dislocation segments, why although anisotropic, the normalized conductivity curves obtained in the principal axis are identical and we show that regular Dingle plots may be used to check the extra broadening of the Landau levels due to dislocations. The second kind of dislocation substructure is shown to be equivalent to quasi one dimensional systems issuing from a truncation of the two dimensional electron gas into quite parallel ribbons localized between the dislocation potential barriers, but no ballistic effects could be observed.
Published: 1996

46. True Young modulus of Pb(Zr,Ti)O3 films measured by nanoindentation

Author: Eric Cattan, E. Fribourg-Blanc, Caroline Soyer, Denis Remiens, Patrick Delobelle, Olivier Guillon, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Bulk modulus, Materials science, Physics and Astronomy (miscellaneous), Modulus, Young's modulus, 02 engineering and technology, Nanoindentation, 021001 nanoscience & nanotechnology, Lead zirconate titanate, 01 natural sciences, chemistry.chemical_compound, symbols.namesake, chemistry, visual_art, 0103 physical sciences, symbols, visual_art.visual_art_medium, Nanoindenter, Ceramic, Composite material, 0210 nano-technology, Elastic modulus
Abstract: In order to assess transverse elastic modulus of lead zirconate titanate (PZT) thin films, we used a nanoindenter with constant monitoring of the force. It is shown that the true elastic modulus, i.e., the low pressure elastic modulus, can be measured by this method. This permitted a determination that sputter deposited PZT (54∕46) films display a Young modulus close to a ferroelectric hard type PZT bulk ceramic. Moreover, this low pressure modulus is independent of grain size and thickness of the film, but this is no more true for high pressure modulus. This provides a step toward a better understanding of the properties of these PZT films and the possibility to better use them in microsystems.
Published: 2004

47. Hysteretic behavior of the charge injection in single silicon nanoparticles

Author: Thierry Melin, D. Deresmes, H. Diesinger, D. Stievenard, Thierry Baron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Silicon, Kinetics, Analytical chemistry, Oxide, chemistry.chemical_element, Nanoparticle, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, chemistry.chemical_compound, chemistry, 0103 physical sciences, Microscopy, Electric force, Charge injection, 0210 nano-technology, Quantum tunnelling
Abstract: Charge injection in individual silicon nanoparticles has been investigated by electric force microscopy (EFM). Stored charges injected from the EFM tip have been counted using a quantitative method. Injection kinetics reveals the setting-up of an equilibrium regime. Equilibrium charge–voltage characteristics are analyzed, and display an overall linear behavior corresponding to successive tunneling through the nonequivalent tip–nanoparticle and nanoparticle–substrate oxide barriers. A hysteretic behavior is observed in the equilibrium charge–voltage characteristics, and attributed to a secondary charge injection process associated with the nanoparticle oxide surface.
Published: 2004

48. Role of V-pits in the performance improvement of InGaN solar cells

Author: Youssef El Gmili, Abdallah Ougazzaden, Paul L. Voss, Suresh Sundaram, Muhammad Arif, Xin Li, Gilles Patriarche, Jeremy Streque, Jean-Paul Salvestrini, Matthew B. Jordan, University of Gujrat, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), School of Instrumentation Science and Opto-electronics Engineering [Beijing], Beihang University (BUAA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012)
Subjects: Solar cells, MATLAB, Materials science, Physics and Astronomy (miscellaneous), Electrical properties and parameters, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Quantum efficiency, [SPI.MAT]Engineering Sciences [physics]/Materials, Semiconductor materials, 0103 physical sciences, Doping, Ultraviolet light, Electron beam induced current, 010302 applied physics, Nanotubes, business.industry, Electron beam-induced current, Energy conversion efficiency, Wide-bandgap semiconductor, Short circuit, Heterojunction, 021001 nanoscience & nanotechnology, Optoelectronics, 0210 nano-technology, business, Current density
Abstract: International audience; We study the influence of V-pits on the overall conversion efficiency of bulk In0.12 Ga0.88N based heterojunction solar cells grown by MOVPE. We show that V-pits significantly enhances the extraction of the photogenerated carriers in the InGaN absorber, resulting in a peak external quantum efficiency of 79% and a short circuit current density (twice the state of the art) of 2.56 mA/cm−2 under AM 1.5G conditions.
Published: 2016

49. Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

Author: Elhadj Dogheche, M. Laügt, Eric Feltin, O. Tottereau, P. Vennéguès, H. P. D. Schenk, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Superlattice, Wide-bandgap semiconductor, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Transmission electron microscopy, 0103 physical sciences, X-ray crystallography, Optoelectronics, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, Layer (electronics)
Abstract: Waveguiding GaN epitaxial layers have been grown by low-pressure metalorganic vapor phase epitaxy on Si(111) substrates using AlN/GaN short period-superlattice (SPS) buffer layer systems. The AlN/GaN SPS has been studied by x-ray diffraction where it appears as pseudoternary AlxGa1−xN alloy. Using elastic theory an effective Al content of 44% is calculated. This value is confirmed by the average Al content calculated from the AlN:GaN layer thickness ratio measured in cross-section transmission electron microscopy. The GaN waveguiding properties have been assessed using the prism coupling method. They sensibly improve with the total thickness of the underlying AlN/GaN superlattice as well as if an additional AlN/GaN SPS is grown atop the GaN waveguiding layer.
Published: 2003

50. Adhesive forces investigation on a silicon tip by contact-mode atomic force microscope

Author: Dominique Collard, Bernard Legrand, Vincent Agache, Lionel Buchaillot, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Kelvin probe force microscope, Materials science, Physics and Astronomy (miscellaneous), business.industry, Electrostatic force microscope, Conductive atomic force microscopy, Local oxidation nanolithography, [SPI]Engineering Sciences [physics], Optics, Dry etching, Magnetic force microscope, business, Non-contact atomic force microscopy, Electron-beam lithography
Abstract: An atomic force microscope operating in contact mode is used in this letter for probing the adhesive forces at the apex of a silicon nanotip with typical radius smaller than 15 nm, fabricated using a combination of high-resolution electron beam lithography and plasma dry etching. The amplitude of the forces is deduced from force versus distance curve measurements. By determining the contact point and the pull-off force from the force curves, the surface topography and the adhesive forces are simultaneously obtained at various locations on the surface. This letter reports both measurements and modeling of adhesive forces versus the contact point on the nanotip. As the nanotip is sharper and has a smaller aperture angle than the employed atomic force microscope tip, the measurements are focused on the nanotip apex.
Published: 2002

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