31 results on '"CHAND, NARESH"'
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2. Temperature characteristics of (InAs)1/(GaAs)4short‐period superlattices quantum well laser
3. High performance strained InGaAs/AlGaAs buried-heterostructure quantum-well lasers fabricated by in situ etching and regrowth
4. (GaAs)m(AlAs)nshort‐period superlattice quantum‐well lasers
5. Wavelength control and residual oxygen in AlGaAs/InGaAs strained quantum‐well heterostructures grown by molecular beam epitaxy
6. (InAs)1/(GaAs)4 superlattices quantum-well laser
7. Residual oxygen levels in AlGaAs/GaAs quantum-well laser structures: Effects of Si and Be doping and substrate misorientation
8. Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular-beam epitaxy
9. An AlGaAs double‐heterojunction bipolar transistor grown by molecular‐beam epitaxy
10. Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double-heterojunction NpN bipolar transistors grown by molecular beam epitaxy
11. Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers
12. Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1−xAs photoconductors
13. Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs
14. Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasers
15. High‐temperature operation (to 180 °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers
16. Elimination of dark line defects in GaAs‐on‐Si by post‐growth patterning and thermal annealing
17. Origin and improvement of interface roughness in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy
18. Stress reduction resulting in reduced degradation in GaAs lasers grown on Si substrates by post growth patterning and SiO2layers
19. Large photoconductive gain in quantum well infrared photodetectors
20. Phase-coupled two-dimensional AlxGa1−xAs-GaAs vertical-cavity surface-emitting laser array
21. GaAs‐on‐Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high‐performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators
22. AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser grown on Si substrate
23. A simple method for elimination of gallium‐source related oval defects in molecular beam epitaxy of GaAs
24. Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector
25. ApnpAlGaAs/GaAs heterojunction bipolar transistor
26. Collector‐emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
27. Conduction‐band structure dependence of persistent photoconductivity in Si‐doped AlxGa1−xAs studied by Hall measurements under hydrostatic pressure
28. Elimination of thermally induced biaxial stress in GaAs on Si layers by post‐growth patterning
29. Effect of arsenic source on the growth of high-purity GaAs by molecular beam epitaxy
30. Correlation between resonantly excited magnetic-field split donor-bound exciton components with their excited state emission analogues in GaAs
31. Measurement of the minority-carrier lifetime and injection efficiency in AlGaAs/GaAs heterojunction bipolar transistors
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