1. Control of pinned layer magnetization direction in spin-valve-type magnetic tunnel junction with an IrMn layer
- Author
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Takeharu Kuroiwa, Beysen Sadeh, Kazunao Sato, Hiroshi Kobayashi, and Takashi Takenaga
- Subjects
Magnetic anisotropy ,Tunnel magnetoresistance ,Magnetization ,Materials science ,Magnetic domain ,Condensed matter physics ,Condensed Matter::Superconductivity ,Spin valve ,General Physics and Astronomy ,Magnetic particle inspection ,Layer (electronics) ,Magnetic field - Abstract
We have experimentally investigated a method of controlling the magnetization direction of a CoFe pinned layer in a spin-valve-type magnetic tunnel junction (MTJ) with an IrMn layer. Arbitrary control of the direction of the pinned layer magnetization was performed by a postannealing process in conditions above the blocking temperature of IrMn and in a magnetic field to saturate the magnetization of the pinned layer. The results show that it is possible to control and to uniformly rearrange the direction of the pinned layer magnetization in MTJs with a postannealing process in the magnetic random access memories manufacturing process.
- Published
- 2004