36 results on '"Bellotti, Enrico"'
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2. Anomalous Lorenz number in massive and tilted Dirac systems
3. On the feasibility of p-type Ga2O3
4. A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen
5. A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies
6. Spin-orbit coupling mediated tunable electron heat capacity of quantum wells
7. Intensity modulated optical transmission in a non-linear dielectric environment with an embedded mono-layer transition metal dichalcogenide
8. Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides
9. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium
10. Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe
11. Tunable chirality and circular dichroism of a topological insulator with C2v symmetry as a function of Rashba and Dresselhaus parameters
12. Optical absorption and intrinsic recombination in relaxed and strained InAs1–xSbx alloys for mid-wavelength infrared application
13. Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism
14. Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective
15. Deriving k·p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures
16. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
17. Theoretical and experimental study of dynamics of photoexcited carriers in GaN
18. Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
19. A numerical study of low- and high-field carrier transport properties in In0.18Al0.82N lattice-matched to GaN
20. Numerical analysis of indirect Auger transitions in InGaN
21. A numerical study of carrier impact ionization in AlxGa1−xN
22. A numerical study of Auger recombination in bulk InGaN
23. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors
24. Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
25. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
26. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
27. Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations
28. Alloy scattering in AlGaN and InGaN: A numerical study
29. Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN
30. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
31. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
32. Modeling of band-to-band tunneling transitions during drift in Monte Carlo transport simulations
33. Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
34. Ensemble Monte Carlo calculation of hole transport in bulk 3C–SiC
35. Ensemble Monte Carlo study of electron transport in wurtzite InN
36. Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
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