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2 results on '"Antonio Drigo"'

1. Determination of lattice parameter and of N lattice location in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epilayers

Author

Antonio Drigo, H. Mariette, L. Grenouillet, G. Ciatto, D. De Salvador, P. Duvaut, Gabriele Bisognin, Marina Berti, P. Gilet, Cecilia Mattevi, Physics and Astronomy Department, University of Padova, 35131 Padova, Italy, European Synchroton Radiation Facility [Grenoble] (ESRF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Spectrométrie Physique (LSP), and Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, Condensed matter physics, ALLOY, Heterostructure, III-V Semiconductors, X-ray diffraction, General Physics and Astronomy, Crystal structure, Rutherford backscattering spectrometry, Channelling, Condensed Matter::Materials Science, Lattice constant, Nuclear reaction analysis, Lattice (order), X-ray crystallography, Ternary operation
Abstract

We have used an experimental strategy that, combining nuclear reaction analysis and Rutherford backscattering spectrometry both in random and channeling geometry, allowed an accurate quantification of the total amount of N in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epitaxial systems (0.038

Published
2004
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2. Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy

Author

Filippo Romanato, Gabriella Leo, Antonio Drigo, M. Mazzer, Nico Lovergine, L. Vasanelli, Roberto Cingolani, Anna Maria Mancini, Lovergine, Nicola, Cingolani, Roberto, G., Leo, Mancini, Anna Maria, Vasanelli, Lorenzo, F., Romanato, Drigo, Antonio, and M., Mazzer

Subjects
Materials science, Physics and Astronomy (miscellaneous), Strain (chemistry), ZnTe/GaAs heterostructure, strain relaxation, Analytical chemistry, Epitaxy, Rutherford backscattering spectrometry, MOVPE-grown layer, ion channeling RBS, ZnTe epitaxial layers, Crystallography, optical reflectance, Residual stress, Ultimate tensile strength, Stress relaxation, Thin film, Visible spectrum
Abstract

We report on the direct measurements of surface lattice strain in ZnTe epitaxial layers on {100}GaAs substrates by ion channeling Rutherford backscattering spectrometry and low-temperature (10 K) reflectance spectroscopy measurements. The measured ZnTe strain is the superposition of the expected thermal (tensile) strain and a thickness-dependent residual compressive strain. Our data indicate that the removal of this residual strain is slower than the rate predicted by the equilibrium theory, following an apparent h^(-1/2) power-law dependence on the epilayer thickness h, above approximately 100 nm.

Published
1993
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