65 results on '"Amano, Hiroshi"'
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2. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
3. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs
4. Impact of graphene state on the orientation of III–nitride
5. UV/DUV light emitters
6. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN
7. Stress relaxation of AlGaN on nonpolar m-plane GaN substrate
8. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic
9. Simultaneous light emission and detection of an AlGaInP quantum well diode
10. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy
11. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes
12. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
13. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
14. Monolithic GaN optoelectronic system on a Si substrate
15. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy
16. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy
17. Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy
18. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes
19. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
20. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
21. Blocking effect of desktop air curtain on aerosols in exhaled breath
22. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer
23. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
24. Defect characterization of {101¯3} GaN by electron microscopy
25. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics
26. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
27. Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)]
28. Isamu Akasaki
29. Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy
30. Effective neutron detection using vertical-type BGaN diodes
31. Non-polar true-lateral GaN power diodes on foreign substrates
32. Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates
33. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
34. Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum
35. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces
36. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes
37. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
38. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
39. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy
40. V-shaped dislocations in a GaN epitaxial layer on GaN substrate
41. V-shaped dislocations in a GaN epitaxial layer on GaN substrate
42. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current
43. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
44. DFT modeling of carbon incorporation in GaN(0001) and GaN(0001¯) metalorganic vapor phase epitaxy
45. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
46. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity
47. In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
48. Effects of exciton localization on internal quantum efficiency of InGaN nanowires
49. Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
50. High hole concentration in Mg-doped a-plane Ga1−xInxN (0<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy
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