1. Radiation Resistance of Fluorite-Structured Nuclear Oxides
- Author
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Frédérico Garrido, Sandra Moll, Lech Nowicki, Gaël Sattonnay, Lionel Thomé, Laetitia Vincent, Floyd D. McDaniel, Barney L. Doyle, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Ion track ,Radiochemistry ,radiation tolerance ,radiation defects ,nuclear and electronic stopping ,020206 networking & telecommunications ,02 engineering and technology ,7. Clean energy ,Crystallographic defect ,Fluence ,Ion ,Crystal ,Chemical physics ,fluorite-type structure ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,0202 electrical engineering, electronic engineering, information engineering ,Nuclear fusion ,020201 artificial intelligence & image processing ,Irradiation ,Radiation resistance - Abstract
International audience; Fluorite-structure oxides are radiation-resistant materials making them ideal candidates for uses as nuclear fuels or as inert matrices for actinide transmutation. The radiation tolerance of urania and cubic zirconia single crystals was investigated by external ion irradiation in predominating domains of electronic and nuclear stopping of bombarding particles. Damage kinetics show that the behavior of the two investigated fluorite-type oxides is almost the same: (i) at low-energy a two-stage disordering process is exhibited - first a ballistic step due to the formation of radiation-induced defects and second a crystal fragmentation induced by the formation of gas bubbles at large concentration -; (ii) at high energy a one-stage damage kinetics associated with the formation of ion tracks whose overlapping at high fluence results in the formation of nanometer-sized domains with a small disorientation.
- Published
- 2009
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