1. FIRST TESTS OF SUPERTHIN, ION-IMPLANTED SILICON STRIP DETECTORS PRODUCED BY LOW-TEMPERATURE TECHNIQUE.
- Author
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KORDYASZ, A. J., KOWNACKI, J., KORDYASZ, Ł., KONOP, M., BEDNAREK, A., KOWALCZYK, A. M., TARASIUK, J., KISIELIŃSKI, M., KOZIK, T., PIASECKI, E., SIBCZYŃSKI, P., STOLARZ, A., KOWALSKA, J., TUCHOLSKI, A., SREBRNY, J., WOLIŃSKA-CICHOCKA, M., NAPIORKOWSKI, P., SARNECKI, J., LIPIŃSKI, D., and WODZIŃSKA, G. H.
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SILICON research , *DETECTORS , *LOW temperature acoustics , *ANNEALING of metals , *NUCLEAR fission - Abstract
A new technique of producing thin strip detectors was developed. The principle of the technique is the application of a low-temperature baking process instead of high temperature annealing. This thermal treatment follows the B+ ion implantation and evaporation of Al as detector contacts, which are created using a single adjusted Al mask in form of a comb. The thickness distribution along X and Y directions for a thin silicon epitaxial membrane was measured by the energy loss of α particles from 241Am (
= 5:5 MeV). Preliminary tests of the first 5 μm thin strip detector have been performed with particles and fission fragments from 252Cf. The ΔE-E ion identification plots were created using a telescope consisting of our one thin strip of the ΔE strip detector (5 μm thick) followed by a typical 300 μm Ortec E detector. [ABSTRACT FROM AUTHOR] - Published
- 2016
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