1. The anti-surfactant effect of silane on the facets-controlled growth of GaN nanorods by MOCVD.
- Author
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Li, J.Z., Chen, Z.Z., Li, S.F., Jiao, Q.Q., Feng, Y.L., Jiang, S.X., Chen, Y.F., Yu, T.J., Shen, B., and Zhang, G.Y.
- Subjects
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GALLIUM nitride , *SURFACE active agents , *SILANE , *NANORODS , *METAL organic chemical vapor deposition , *X-ray diffraction - Abstract
N-polar GaN nanorods were selective area grown by continuous mode metalorganic chemical vapor deposition (MOCVD) under a Ga-rich and high silane flow condition. The interruption comparing with continuous supply of silane flow was performed to study the role of silane flux. High resolution scanning electron microscopy (SEM), x-ray diffraction (XRD), cathodoluminescence (CL) and x-ray photoelectron spectroscopy (XPS) measurements were performed. The enhanced vertical growth rate was achieved as 42 μm/h and sharp smooth m-plane, r-plane and c-plane facets were obtained for the nanorods with high silane flux. Si N bonds were clarified to be formed on the surface of the nanorod by XPS spectra. The silane acting as anti-surfactant was suggested to explain the diffusion and incorporation of the species on the facets of GaN nanorods. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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