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Series of In x Ga 1-x As/GaAs structures with indium vapor composition ranging from 13 to 100%, denoted samples A, B, C and D, were grown by metalorganic vapor phase epitaxy (MOVPE) at 450 °C and in situ monitored by spectral reflectance (SR). In order to contribute to the enhancement of crystal quality and to understand growth kinetic of In x Ga 1-x As/GaAs structures, the dependence of structural and morphological properties on indium composition x was studied. Basing on high resolution x-ray diffraction (HRXRD) measurements, solid indium compositions x of samples A, B, C and D were determined. Also, the evolution of structural quality (dislocations density, grain size, etc.) as a function of indium composition x was quantified. Besides, morphological properties (hatching and islands formations, densities, sizes and uniformities, RMS surface roughness, etc.) and growth process (growth anisotropy, etc.) versus indium composition x were examined using atomic force microscopy (AFM) analysis. Also, reflectance three-dimensional plot as function of time and wavelength was recorded to quantify the evolution of reflectivity in the wavelength range from 400 to 1000 nm and to determine some growth parameters such as growth rates and thicknesses of In x Ga 1-x As samples. A good correlation between experimental results issued from different characterizations tools was obtained. [ABSTRACT FROM AUTHOR]

Optical properties of InxGa1-xAs films grown on GaAs substrates by metalorganic vapor phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at room temperature and near-infrared photoluminescence (PL) at 10K were performed. SR signals in the range of 200-1700nm provided the x-dependence of the critical point energies E1, E1+Δ1 and E2. Furthermore, band-gap and spin-orbit splitting energies, as well as their broadening parameters were determined from PR spectra and studied as function of In composition ranging from 0 to 0.37. On the other hand, the origins of luminescence bands observed in PL spectra were revealed. A redshift of 16meV/%In in the band-to-band transition was obtained. All results issued from different characterizations tools are correlated and compared to the literature. [ABSTRACT FROM AUTHOR]