6 results on '"Zhang, Z.L."'
Search Results
2. Discovery of new MAX-phase-like layered ternary carbide V8P6C: Crystal structure, thermal expansion, and elastic properties
- Author
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Chen, H.X., Sheng, L., Zhang, Z.L., Wen, X.C., Yang, D.L., Ye, X.Y., and Dai, P.Q.
- Published
- 2024
- Full Text
- View/download PDF
3. Human serum albumin-palladium(II) agent complex
- Author
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Zhang, Z.L., primary and Zhang, J.Z., additional
- Published
- 2024
- Full Text
- View/download PDF
4. Search for a massless particle beyond the Standard Model in the Σ+ → p + invisible decay
- Author
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Ablikim, M., primary, Achasov, M.N., additional, Adlarson, P., additional, Afedulidis, O., additional, Ai, X.C., additional, Aliberti, R., additional, Amoroso, A., additional, An, Q., additional, Bai, Y., additional, Bakina, O., additional, Balossino, I., additional, Ban, Y., additional, Bao, H.-R., additional, Batozskaya, V., additional, Begzsuren, K., additional, Berger, N., additional, Berlowski, M., additional, Bertani, M., additional, Bettoni, D., additional, Bianchi, F., additional, Bianco, E., additional, Bortone, A., additional, Boyko, I., additional, Briere, R.A., additional, Brueggemann, A., additional, Cai, H., additional, Cai, X., additional, Calcaterra, A., additional, Cao, G.F., additional, Cao, N., additional, Cetin, S.A., additional, Chang, J.F., additional, Che, G.R., additional, Chelkov, G., additional, Chen, C., additional, Chen, C.H., additional, Chen, Chao, additional, Chen, G., additional, Chen, H.S., additional, Chen, H.Y., additional, Chen, M.L., additional, Chen, S.J., additional, Chen, S.L., additional, Chen, S.M., additional, Chen, T., additional, Chen, X.R., additional, Chen, X.T., additional, Chen, Y.B., additional, Chen, Y.Q., additional, Chen, Z.J., additional, Chen, Z.Y., additional, Choi, S.K., additional, Cibinetto, G., additional, Cossio, F., additional, Cui, J.J., additional, Dai, H.L., additional, Dai, J.P., additional, Dbeyssi, A., additional, de Boer, R.E., additional, Dedovich, D., additional, Deng, C.Q., additional, Deng, Z.Y., additional, Denig, A., additional, Denysenko, I., additional, Destefanis, M., additional, De Mori, F., additional, Ding, B., additional, Ding, X.X., additional, Ding, Y., additional, Dong, J., additional, Dong, L.Y., additional, Dong, M.Y., additional, Dong, X., additional, Du, M.C., additional, Du, S.X., additional, Duan, Z.H., additional, Egorov, P., additional, Fan, Y.H., additional, Fang, J., additional, Fang, S.S., additional, Fang, W.X., additional, Fang, Y., additional, Fang, Y.Q., additional, Farinelli, R., additional, Fava, L., additional, Feldbauer, F., additional, Felici, G., additional, Feng, C.Q., additional, Feng, J.H., additional, Feng, Y.T., additional, Fritsch, M., additional, Fu, C.D., additional, Fu, J.L., additional, Fu, Y.W., additional, Gao, H., additional, Gao, X.B., additional, Gao, Y.N., additional, Gao, Yang, additional, Garbolino, S., additional, Garzia, I., additional, Ge, L., additional, Ge, P.T., additional, Ge, Z.W., additional, Geng, C., additional, Gersabeck, E.M., additional, Gilman, A., additional, Goetzen, K., additional, Gong, L., additional, Gong, W.X., additional, Gradl, W., additional, Gramigna, S., additional, Greco, M., additional, Gu, M.H., additional, Gu, Y.T., additional, Guan, C.Y., additional, Guan, Z.L., additional, Guo, A.Q., additional, Guo, L.B., additional, Guo, M.J., additional, Guo, R.P., additional, Guo, Y.P., additional, Guskov, A., additional, Gutierrez, J., additional, Han, K.L., additional, Han, T.T., additional, Hao, X.Q., additional, Harris, F.A., additional, He, K.K., additional, He, K.L., additional, Heinsius, F.H., additional, Heinz, C.H., additional, Heng, Y.K., additional, Herold, C., additional, Holtmann, T., additional, Hong, P.C., additional, Hou, G.Y., additional, Hou, X.T., additional, Hou, Y.R., additional, Hou, Z.L., additional, Hu, B.Y., additional, Hu, H.M., additional, Hu, J.F., additional, Hu, S.L., additional, Hu, T., additional, Hu, Y., additional, Huang, G.S., additional, Huang, K.X., additional, Huang, L.Q., additional, Huang, X.T., additional, Huang, Y.P., additional, Hussain, T., additional, Hölzken, F., additional, Hüsken, N., additional, in der Wiesche, N., additional, Jackson, J., additional, Janchiv, S., additional, Jeong, J.H., additional, Ji, Q., additional, Ji, Q.P., additional, Ji, W., additional, Ji, X.B., additional, Ji, X.L., additional, Ji, Y.Y., additional, Jia, X.Q., additional, Jia, Z.K., additional, Jiang, D., additional, Jiang, H.B., additional, Jiang, P.C., additional, Jiang, S.S., additional, Jiang, T.J., additional, Jiang, X.S., additional, Jiang, Y., additional, Jiao, J.B., additional, Jiao, J.K., additional, Jiao, Z., additional, Jin, S., additional, Jin, Y., additional, Jing, M.Q., additional, Jing, X.M., additional, Johansson, T., additional, Kabana, S., additional, Kalantar-Nayestanaki, N., additional, Kang, X.L., additional, Kang, X.S., additional, Kavatsyuk, M., additional, Ke, B.C., additional, Khachatryan, V., additional, Khoukaz, A., additional, Kiuchi, R., additional, Kolcu, O.B., additional, Kopf, B., additional, Kuessner, M., additional, Kui, X., additional, Kumar, N., additional, Kupsc, A., additional, Kühn, W., additional, Lane, J.J., additional, Larin, P., additional, Lavezzi, L., additional, Lei, T.T., additional, Lei, Z.H., additional, Lellmann, M., additional, Lenz, T., additional, Li, C., additional, Li, C.H., additional, Li, Cheng, additional, Li, D.M., additional, Li, F., additional, Li, G., additional, Li, H.B., additional, Li, H.J., additional, Li, H.N., additional, Li, Hui, additional, Li, J.R., additional, Li, J.S., additional, Li, Ke, additional, Li, L.J., additional, Li, L.K., additional, Li, Lei, additional, Li, M.H., additional, Li, P.R., additional, Li, Q.M., additional, Li, Q.X., additional, Li, R., additional, Li, S.X., additional, Li, T., additional, Li, W.D., additional, Li, W.G., additional, Li, X., additional, Li, X.H., additional, Li, X.L., additional, Li, X.Z., additional, Li, Xiaoyu, additional, Li, Y.G., additional, Li, Z.J., additional, Li, Z.X., additional, Liang, C., additional, Liang, H., additional, Liang, Y.F., additional, Liang, Y.T., additional, Liao, G.R., additional, Liao, L.Z., additional, Libby, J., additional, Limphirat, A., additional, Lin, C.C., additional, Lin, D.X., additional, Lin, T., additional, Liu, B.J., additional, Liu, B.X., additional, Liu, C., additional, Liu, C.X., additional, Liu, F.H., additional, Liu, Fang, additional, Liu, Feng, additional, Liu, G.M., additional, Liu, H., additional, Liu, H.B., additional, Liu, H.M., additional, Liu, Huanhuan, additional, Liu, Huihui, additional, Liu, J.B., additional, Liu, J.Y., additional, Liu, K., additional, Liu, K.Y., additional, Liu, Ke, additional, Liu, L., additional, Liu, L.C., additional, Liu, Lu, additional, Liu, M.H., additional, Liu, P.L., additional, Liu, Q., additional, Liu, S.B., additional, Liu, T., additional, Liu, W.K., additional, Liu, W.M., additional, Liu, X., additional, Liu, Y., additional, Liu, Y.B., additional, Liu, Z.A., additional, Liu, Z.D., additional, Liu, Z.Q., additional, Lou, X.C., additional, Lu, F.X., additional, Lu, H.J., additional, Lu, J.G., additional, Lu, X.L., additional, Lu, Y., additional, Lu, Y.P., additional, Lu, Z.H., additional, Luo, C.L., additional, Luo, M.X., additional, Luo, T., additional, Luo, X.L., additional, Lyu, X.R., additional, Lyu, Y.F., additional, Ma, F.C., additional, Ma, H., additional, Ma, H.L., additional, Ma, J.L., additional, Ma, L.L., additional, Ma, M.M., additional, Ma, Q.M., additional, Ma, R.Q., additional, Ma, T., additional, Ma, X.T., additional, Ma, X.Y., additional, Ma, Y., additional, Ma, Y.M., additional, Maas, F.E., additional, Maggiora, M., additional, Malde, S., additional, Mao, Y.J., additional, Mao, Z.P., additional, Marcello, S., additional, Meng, Z.X., additional, Messchendorp, J.G., additional, Mezzadri, G., additional, Miao, H., additional, Min, T.J., additional, Mitchell, R.E., additional, Mo, X.H., additional, Moses, B., additional, Muchnoi, N.Yu., additional, Muskalla, J., additional, Nefedov, Y., additional, Nerling, F., additional, Nie, L.S., additional, Nikolaev, I.B., additional, Ning, Z., additional, Nisar, S., additional, Niu, Q.L., additional, Niu, W.D., additional, Niu, Y., additional, Olsen, S.L., additional, Ouyang, Q., additional, Pacetti, S., additional, Pan, X., additional, Pan, Y., additional, Pathak, A., additional, Patteri, P., additional, Pei, Y.P., additional, Pelizaeus, M., additional, Peng, H.P., additional, Peng, Y.Y., additional, Peters, K., additional, Ping, J.L., additional, Ping, R.G., additional, Plura, S., additional, Prasad, V., additional, Qi, F.Z., additional, Qi, H., additional, Qi, H.R., additional, Qi, M., additional, Qi, T.Y., additional, Qian, S., additional, Qian, W.B., additional, Qiao, C.F., additional, Qiao, X.K., additional, Qin, J.J., additional, Qin, L.Q., additional, Qin, L.Y., additional, Qin, X.S., additional, Qin, Z.H., additional, Qiu, J.F., additional, Qu, Z.H., additional, Redmer, C.F., additional, Ren, K.J., additional, Rivetti, A., additional, Rolo, M., additional, Rong, G., additional, Rosner, Ch., additional, Ruan, S.N., additional, Salone, N., additional, Sarantsev, A., additional, Schelhaas, Y., additional, Schoenning, K., additional, Scodeggio, M., additional, Shan, K.Y., additional, Shan, W., additional, Shan, X.Y., additional, Shang, Z.J., additional, Shangguan, J.F., additional, Shao, L.G., additional, Shao, M., additional, Shen, C.P., additional, Shen, H.F., additional, Shen, W.H., additional, Shen, X.Y., additional, Shi, B.A., additional, Shi, H., additional, Shi, H.C., additional, Shi, J.L., additional, Shi, J.Y., additional, Shi, Q.Q., additional, Shi, S.Y., additional, Shi, X., additional, Song, J.J., additional, Song, T.Z., additional, Song, W.M., additional, Song, Y.J., additional, Song, Y.X., additional, Sosio, S., additional, Spataro, S., additional, Stieler, F., additional, Su, Y.J., additional, Sun, G.B., additional, Sun, G.X., additional, Sun, H., additional, Sun, H.K., additional, Sun, J.F., additional, Sun, K., additional, Sun, L., additional, Sun, S.S., additional, Sun, T., additional, Sun, W.Y., additional, Sun, Y., additional, Sun, Y.J., additional, Sun, Y.Z., additional, Sun, Z.Q., additional, Sun, Z.T., additional, Tang, C.J., additional, Tang, G.Y., additional, Tang, J., additional, Tang, M., additional, Tang, Y.A., additional, Tao, L.Y., additional, Tao, Q.T., additional, Tat, M., additional, Teng, J.X., additional, Thoren, V., additional, Tian, W.H., additional, Tian, Y., additional, Tian, Z.F., additional, Uman, I., additional, Wan, Y., additional, Wang, S.J., additional, Wang, B., additional, Wang, B.L., additional, Wang, Bo, additional, Wang, D.Y., additional, Wang, F., additional, Wang, H.J., additional, Wang, J.J., additional, Wang, J.P., additional, Wang, K., additional, Wang, L.L., additional, Wang, M., additional, Wang, Meng, additional, Wang, N.Y., additional, Wang, S., additional, Wang, T., additional, Wang, T.J., additional, Wang, W., additional, Wang, W.P., additional, Wang, X., additional, Wang, X.F., additional, Wang, X.J., additional, Wang, X.L., additional, Wang, X.N., additional, Wang, Y., additional, Wang, Y.D., additional, Wang, Y.F., additional, Wang, Y.L., additional, Wang, Y.N., additional, Wang, Y.Q., additional, Wang, Yaqian, additional, Wang, Yi, additional, Wang, Z., additional, Wang, Z.L., additional, Wang, Z.Y., additional, Wang, Ziyi, additional, Wei, D.H., additional, Weidner, F., additional, Wen, S.P., additional, Wen, Y.R., additional, Wiedner, U., additional, Wilkinson, G., additional, Wolke, M., additional, Wollenberg, L., additional, Wu, C., additional, Wu, J.F., additional, Wu, L.H., additional, Wu, L.J., additional, Wu, X., additional, Wu, X.H., additional, Wu, Y., additional, Wu, Y.H., additional, Wu, Y.J., additional, Wu, Z., additional, Xia, L., additional, Xian, X.M., additional, Xiang, B.H., additional, Xiang, T., additional, Xiao, D., additional, Xiao, G.Y., additional, Xiao, S.Y., additional, Xiao, Y.L., additional, Xiao, Z.J., additional, Xie, C., additional, Xie, X.H., additional, Xie, Y., additional, Xie, Y.G., additional, Xie, Y.H., additional, Xie, Z.P., additional, Xing, T.Y., additional, Xu, C.F., additional, Xu, C.J., additional, Xu, G.F., additional, Xu, H.Y., additional, Xu, M., additional, Xu, Q.J., additional, Xu, Q.N., additional, Xu, W., additional, Xu, W.L., additional, Xu, X.P., additional, Xu, Y.C., additional, Xu, Z.P., additional, Xu, Z.S., additional, Yan, F., additional, Yan, L., additional, Yan, W.B., additional, Yan, W.C., additional, Yan, X.Q., additional, Yang, H.J., additional, Yang, H.L., additional, Yang, H.X., additional, Yang, Tao, additional, Yang, Y., additional, Yang, Y.F., additional, Yang, Y.X., additional, Yang, Yifan, additional, Yang, Z.W., additional, Yao, Z.P., additional, Ye, M., additional, Ye, M.H., additional, Yin, J.H., additional, You, Z.Y., additional, Yu, B.X., additional, Yu, C.X., additional, Yu, G., additional, Yu, J.S., additional, Yu, T., additional, Yu, X.D., additional, Yu, Y.C., additional, Yuan, C.Z., additional, Yuan, J., additional, Yuan, L., additional, Yuan, S.C., additional, Yuan, Y., additional, Yuan, Y.J., additional, Yuan, Z.Y., additional, Yue, C.X., additional, Zafar, A.A., additional, Zeng, F.R., additional, Zeng, S.H., additional, Zeng, X., additional, Zeng, Y., additional, Zeng, Y.J., additional, Zhai, X.Y., additional, Zhai, Y.C., additional, Zhan, Y.H., additional, Zhang, A.Q., additional, Zhang, B.L., additional, Zhang, B.X., additional, Zhang, D.H., additional, Zhang, G.Y., additional, Zhang, H., additional, Zhang, H.C., additional, Zhang, H.H., additional, Zhang, H.Q., additional, Zhang, H.R., additional, Zhang, H.Y., additional, Zhang, J., additional, Zhang, J.J., additional, Zhang, J.L., additional, Zhang, J.Q., additional, Zhang, J.S., additional, Zhang, J.W., additional, Zhang, J.X., additional, Zhang, J.Y., additional, Zhang, J.Z., additional, Zhang, Jianyu, additional, Zhang, L.M., additional, Zhang, Lei, additional, Zhang, P., additional, Zhang, Q.Y., additional, Zhang, R.Y., additional, Zhang, Shuihan, additional, Zhang, Shulei, additional, Zhang, X.D., additional, Zhang, X.M., additional, Zhang, X.Y., additional, Zhang, Y., additional, Zhang, Y.T., additional, Zhang, Y.H., additional, Zhang, Y.M., additional, Zhang, Yan, additional, Zhang, Yao, additional, Zhang, Z.D., additional, Zhang, Z.H., additional, Zhang, Z.L., additional, Zhang, Z.Y., additional, Zhang, Z.Z., additional, Zhao, G., additional, Zhao, J.Y., additional, Zhao, J.Z., additional, Zhao, Lei, additional, Zhao, Ling, additional, Zhao, M.G., additional, Zhao, N., additional, Zhao, R.P., additional, Zhao, S.J., additional, Zhao, Y.B., additional, Zhao, Y.X., additional, Zhao, Z.G., additional, Zhemchugov, A., additional, Zheng, B., additional, Zheng, B.M., additional, Zheng, J.P., additional, Zheng, W.J., additional, Zheng, Y.H., additional, Zhong, B., additional, Zhong, X., additional, Zhou, H., additional, Zhou, J.Y., additional, Zhou, L.P., additional, Zhou, S., additional, Zhou, X., additional, Zhou, X.K., additional, Zhou, X.R., additional, Zhou, X.Y., additional, Zhou, Y.Z., additional, Zhu, J., additional, Zhu, K., additional, Zhu, K.J., additional, Zhu, K.S., additional, Zhu, L., additional, Zhu, L.X., additional, Zhu, S.H., additional, Zhu, S.Q., additional, Zhu, T.J., additional, Zhu, W.D., additional, Zhu, Y.C., additional, Zhu, Z.A., additional, Zou, J.H., additional, and Zu, J., additional
- Published
- 2024
- Full Text
- View/download PDF
5. Experimental and numerical investigations of pore formation mechanisms in cold spray
- Author
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Zhang, Z.L., Gitardi, D., Scarafile, M., Valente, A., Afrasiabi, M., and Bambach, M.
- Abstract
Cold spray (CS) has become an appealing technique for both printing and repairing components. Understanding the formation of a powder track along with the deposition porosity is crucial for producing high-quality structures by CS, unfortunately, very limited resources have been addressed to this direction, especially for the pore formation process. We address this gap by conducting experiments to measure particle properties, print and cut tracks, capture cross-section views, and calculate the deposition porosity. To overcome experimental limitations in observing the coating process, we develop and perform high-fidelity process simulations at the powder-scale using a massively parallel smoothed particle hydrodynamics (SPH) method that incorporates over 10 million discretization points to simulate around 200’000 powder particles for the first time. The high-fidelity SPH simulations of CS exhibit excellent agreement with the experimentally measured data in capturing track profiles, surface roughness and deposition porosity, outperforming the numerical results by current part-scale simulation tools. The present work’s key novelties lie in integrating direct powder measurement data into a large-scale CS process simulation, achieving unprecedented computational performance via high accuracy SPH version and massive MPI parallelization, and explaining the mechanisms governing the formation of pores. Three distinct types of pores with varying sizes are characterized, which are attributed to the spatial distribution intensity of powders, differences in powder size, and the phenomena of slipping and rebounding. Through control of feed rate, nozzle speed, feedstock quality, and distribution intensity, the porosity of the deposited track could be significantly reduced.
- Published
- 2024
- Full Text
- View/download PDF
6. Modeling of elastic-plastic behaviors of complex-phase steel CP980 and its application in the springback analysis of forming/bending process
- Author
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Zhang, Z.L., Guo, J., Yu, S.Z., Li, X.D., Wang, B.T., Chang, Y., and Liu, H.L.
- Abstract
The application of high-strength steels can improve the safety and lightweight of automobiles without significantly increasing costs. However, with the increase of the strength, the springback after forming is also more serious, which seriously restricts the wide-range promotion of high-strength steels. The springback prediction using numerical simulation is an effective way for the obtainment of the high-precision forming results. In this paper, the 980 MPa-grade complex-phase (CP) steel is investigated, and the springback behavior of the CP980 sheet is studied by combining experiment and simulation. The basic mechanical properties and anisotropic yield model parameters of the CP980 steel are obtained by uniaxial and biaxial tensile tests. The elastic modulus attenuation model of the CP980 steel is established by the cyclic loading-unloading test. The true stress-plastic strain data are used to fit the parameters of the hardening model before necking, and the post-necking stress-strain relation is obtained by the extrapolation and optimization of the hardening model. Four constitutive models are established by combining different elastic, yield and hardening functions and further programmed by UMAT subroutine in ABAQUS. The V-shaped forming/bending tests with the bending angle of 60° and 90° are adopted to verify the effectiveness of the constitutive models. The results show that the constitutive model including the attenuated elastic modulus, anisotropic yield and optimized hardening functions can contribute to the highest springback prediction accuracy. With the decrease of the bending angle, the springback phenomenon becomes more significant. The research of this paper is helpful to evaluate and predict the springback results, and further enhance the forming quality of the CP steel with complex microstructure.
- Published
- 2024
- Full Text
- View/download PDF
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