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Power losses in semiconductor devices present a significant impediment to advancing power electronics systems for achieving higher frequencies, improved efficiency, and greater integration. A major challenge lies in directly coupling power losses with various control strategies, considering the variations in manufacturers, packaging, and process structures within the power electronics field. This paper introduces a field‐circuit coupling simulation methodology of the insulated gate bipolar transistor (IGBT) within the Simulink/COMSOL environment, using a conventional three‐phase six‐switch voltage source inverter (VSI) IGBT module as a case study. A composite transfer function interconnects the electrical and thermal aspects, enabling bidirectional coupling between IGBT temperature and losses. This study aims to comprehensively compare the effects of various control strategies, namely, single‐vector, dual‐vector, and three‐vector current model predictive control (CMPC) and space vector pulse width modulation (SVPWM), on the losses and temperature of IGBT power modules. The findings emphasize that losses are significantly influenced by the selection of weighting factor coefficients and power factor settings under the same CMPC control strategy with a fixed switching frequency. Additionally, the selection of control strategies, such as CMPC and SVPWM, substantially impacts power losses in power electronic devices. [ABSTRACT FROM AUTHOR]

Summary: This paper presents a multiobjective optimal power prediction fault‐tolerant control (MO2PPC) approach for mitigating DC link neutral‐point voltage imbalance and current ripple problems in three‐level T‐type inverter (3LT2I). Additionally, an auxiliary thyristor is employed to isolate and reconstruct the faulty phase into an 8ST2I for ensuring uninterrupted operation during phase failure. A method called injected bias current‐MO2PPC (IBC‐MO2PPC) fault‐tolerant strategy is proposed for this structure. This approach eliminates the need for DC or AC current sensors to reconstruct the three‐phase current, thereby reducing neutral‐point oscillation caused by phase deficiency and ensuring full power output after failure. Additionally, nonfaulty phase power loss is compared and analyzed to verify the stability of this method following a phase fault. The internal losses and temperature distribution of an IGBT module in a bridge arm before and after a fault are verified through a multiphysics‐circuit model in COMSOL‐Simulink coupling simulation presented last. The model shows reduced conduction losses and overall lower temperature distribution in the IGBT module after fault reconstruction. Experiments and multiphysics simulations have demonstrated that this approach displays exceptional robustness and sustainability throughout the entire fault cycle. [ABSTRACT FROM AUTHOR]