Molybdenum disulfide (MoS 2 ) has been attracting attention for its theoretically outstanding electrical characteristics such as an appropriate bandgap, high mobility, and atomically thin nature. However, when MoS 2 is used to fabricate field-effect transistors (FETs), it is difficult to achieve intrinsically good performance due to severe scattering caused by charged impurities (CIs), surface roughness, and surface optical phonons (SOPs). Since SOP scattering is widely acknowledged as the dominant mechanism degrading mobility at room temperature, in this study, we aim to suppress the SOP scattering originating from high-κ oxide dielectrics (such as Al 2 O 3 with a low SOP energy of 48.2 meV), by inserting aluminum nitride (AlN) interfacial layers with a high SOP energy of 81.4 meV. MoS 2 FETs with an AlN sandwich structure exhibit higher on-current levels and field-effect mobility by approximately 2.5 and 2.3 times, respectively, compared with Al 2 O 3 sandwiched MoS 2 FETs. Furthermore, the suppression of SOP scattering by the AlN interfacial layers can be confirmed by the power-law relationship between temperature and mobility, μ ∝ T - γ . As the number of interfaces between MoS 2 and AlN increases from 0 to 2, the γ value decreases from 1.3 to 0.12.