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Your search keyword '"Xia, Tianlong"' showing total 5 results
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5 results on '"Xia, Tianlong"'

1. Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in $\bf{MnBi_2Te_4}$

Author

Yang, Shiqi, Xu, Xiaolong, Gao, Yuchen, Guzman, Roger, Gu, Pingfan, Wang, Huan, Huang, Yuan, Zhou, Wu, Xia, Tianlong, and Ye, Yu

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin uncompensated antiferromagnetic MnBi$_2$Te$_4$. The magnitude and direction of the exchange field can be intentionally controlled by designing a magnetic field sweep protocol without a field cooling process. The combined experimental and theoretical simulation results indicate that the spin-flip process assisted by the ubiquitous defect-induced pinning domain sites with varying inner exchange interactions might give rise to the emergence and robustness of this peculiar exchange bias. The temperature and thickness dependence of the exchange bias phenomena are systematically investigated for further study and exploitation of its unique properties. This mechanism hold promise for highly tunable exchange bias in prevalent magnetic systems by engineering the properties of domain structures, and also offers promising avenues for the design of spintronic devices combing its topology based on MnBi$_2$Te$_4$., Comment: 8 pages, 4 figures

Published
2024

2. Local Manipulation of Skyrmion Lattice in Fe3GaTe2 at Room Temperature

Author

Jin, Shuaizhao, Wang, Zhan, Dong, Shouzhe, Wang, Yiting, Han, Kun, Wang, Guangcheng, Deng, Zunyi, Jiang, Xingan, Zhang, Ying, Huang, Houbing, Hong, Jiawang, Wang, Xiaolei, Xia, Tianlong, Cheong, Sang-Wook, and Wang, Xueyun

Subjects
Condensed Matter - Materials Science
Abstract

Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intrinsic skyrmion state in van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flake. The ordering of skyrmion state is further analyzed. Our result suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.

Published
2024

4. Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4.

Author

Li, Yaoxin, Wang, Yongchao, Lian, Zichen, Li, Hao, Gao, Zhiting, Xu, Liangcai, Wang, Huan, Lu, Rui'e, Li, Longfei, Feng, Yang, Zhu, Jinjiang, Liu, Liangyang, Wang, Yongqian, Fu, Bohan, Yang, Shuai, Yang, Luyi, Wang, Yihua, Xia, Tianlong, Liu, Chang, and Jia, Shuang

Subjects
TOPOLOGICAL insulators, PHASES of matter, TOPOLOGICAL property, MAGNETIC properties, MAGNETIC fields
Abstract

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices. MnBi2Te4 is an antiferromagnetic topological insulator. This combination of magnetic ordering and topological properties has resulted in intense interest, however, like many van der Waals materials, experimental results are hampered by fabrication difficulties. Here, Li, Wang, Lian et al. show that the fabrication process itself can result in mismatched thickness dependence of magneto-transport measurements. ' [ABSTRACT FROM AUTHOR]

Published
2024
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5. Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi 2 Te 4 .

Author

Li Y, Wang Y, Lian Z, Li H, Gao Z, Xu L, Wang H, Lu R, Li L, Feng Y, Zhu J, Liu L, Wang Y, Fu B, Yang S, Yang L, Wang Y, Xia T, Liu C, Jia S, Wu Y, Zhang J, Wang Y, and Liu C

Abstract

The van der Waals antiferromagnetic topological insulator MnBi 2 Te 4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi 2 Te 4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi 2 Te 4 . We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi 2 Te 4 , and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi 2 Te 4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi 2 Te 4 , but also highlights the critical issues concerning the fabrication and characterization of 2D material devices., (© 2024. The Author(s).)

Published
2024
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