Search

Deep‐red and near‐infrared emitters with twisted donor–acceptor (D–A) structures often exhibit suboptimal performance in organic light‐emitting diodes (OLEDs) due to constraints imposed by the energy gap law. In this work, a pure hydrogen carbon (PHC) host material named SBF‐DTP is purposefully tailored for deep‐red OLEDs. The excellent capacity of SBF‐DTP to support D–A type DR emitters effectively arises from its distinctive attributes: localized excitation states, 3D configuration, and low polarity. When employing SBF‐DTP as the host for the fluorescence emitter DCPA‐TPA and the thermally activated delayed fluorescence emitter APDC‐DTPA, doped films exhibit substantially enhanced photoluminescence quantum yields. This improvement leads to high‐efficiency OLEDs with external quantum efficiencies of 5.47% for DCPA‐TPA and 20.03% for APDC‐DTPA, respectively, which is about twice as high as the initial reports. This findings underscore the paramount significance of developing efficient host materials in the pursuit of high‐performance deep red and even near‐infrared OLEDs. [ABSTRACT FROM AUTHOR]