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The rapid advancement of modern computing technology has pushed complementary metal–oxide–semiconductor (CMOS) scaling to its limits, driving the need for alternative approaches such as in-memory computing. Memtransistors have emerged as promising candidates for in-memory computing, offering the integration of data memory and processing within a single device. In this study, our device exhibits optoelectronic switching behavior, allowing for laser pulse-induced memory and voltage pulse-induced erasing, enabling access to optical storage and switching properties. A laser pulse can induce a persistent resistance state that remains stable for extended duration surpassing 4 × 103 seconds. Furthermore, the memtransistor exhibits a high memory on/off ratio of approximately 2 × 103 and fast light writing time (2 ms) and voltage erasing time (2.48 ms). The demonstrated ZnO/WSe2 mixed-dimensional heterostructure memory device represents a significant advancement in optoelectronic in-memory computing. [ABSTRACT FROM AUTHOR]