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Memristors are considered key building blocks for developing neuromorphic or in-memory computing hardware. Here, we study the ferroelectric and memristive response of Pt/Ca:HfO2/Pt devices fabricated on silicon by spin-coating from chemical solution deposition followed by a pyrolysis step and a final thermal treatment for crystallization at 800°C for 90 s. For pyrolysis temperature of 300°C, the annealed samples are ferroelectric while for 400°C a dielectric behavior is observed. For each case, we found a distinct, forming-free, memristive response. Ferroelectric devices can sustain polarization switching and memristive behavior simultaneously. Aided by numerical simulations, we describe the memristive behavior of ferroelectric devices arising from oxide-metal Schottky barriers modulation by both the direction of the electrical polarization and oxygen vacancy electromigration. For non-ferroelectric samples, only the latter effect controls the memristive behavior. [ABSTRACT FROM AUTHOR]