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We present a fairly understudied material system suitable for the realization of tunable quantum-dot (QD) emission within the visible-to-near-infrared spectrum (in particular, in the 650-720 nm wavelength range). Specifically, crystal-pure wurtzite gallium phosphide (GaP) nanowires (NWs) are synthesized, incorporating single gallium arsenide phosphide (GaAs x P 1- x ) QDs of various compositions. Detailed growth procedures are outlined, accompanied by an analysis of the synthesis challenges encountered during the realization of these nanostructures and the strategies to solve them. Notably, a great degree of control over the shape and composition of the ternary alloy QD is achieved, enabling a well-defined confinement and the tunability of the emission wavelength. This is confirmed by low-temperature microphotoluminescence (μ-PL) investigation showing that the NW emission is dominated by a narrow peak whose energy shifts according to the As content of the QD: from ∼650 nm (As = 70%) to ∼720 nm (As = 90%). Moreover, a localized and efficient carrier recombination mechanism is found by single-NW μ-PL mapping, confirming that this emission arises from the QD. Finally, a power and temperature μ-PL study is presented and used to characterize the QD excitonic properties and the nature of the involved energy levels. Our findings underscore the potential for these QDs in NWs with tailored compositions to achieve the desired light emission characteristics, thereby advancing applications in quantum optics and nanophotonics.

InAs x P 1- x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAs x P 1- x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAs x P 1- x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAs x P 1- x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAs x P 1- x QDs with a composition in the range of x = 0.24-1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAs x P 1- x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

InAs quantum wells (QWs) are promising material systems due to their small effective mass, narrow bandgap, strong spin-orbit coupling, large g-factor, and transparent interface to superconductors. Therefore, they are promising candidates for the implementation of topological superconducting states. Despite this potential, the growth of InAs QWs with high crystal quality and well-controlled morphology remains challenging. Adding an overshoot layer at the end of the metamorphic buffer layer, i.e., a layer with a slightly larger lattice constant than the active region of the device, helps to overcome the residual strain and provides optimally relaxed lattice parameters for the QW. In this work, we systematically investigated the influence of overshoot layer thickness on the morphological, structural, strain, and transport properties of undoped InAs QWs on GaAs(100) substrates. Transmission electron microscopy reveals that the metamorphic buffer layer, which includes the overshoot layer, provides a misfit dislocation-free InAs QW active region. Moreover, the residual strain in the active region is compressive in the sample with a 200 nm-thick overshoot layer but tensile in samples with an overshoot layer thicker than 200 nm, and it saturates to a constant value for overshoot layer thicknesses above 350 nm. We found that electron mobility does not depend on the crystallographic directions. A maximum electron mobility of 6.07 × 10 5 cm 2 /Vs at 2.6 K with a carrier concentration of 2.31 × 10 11 cm -2 in the sample with a 400 nm-thick overshoot layer has been obtained.

Optical frequency comb synthesizers, operating in the harmonic regime, are metrological sources in which the emitted optical power is concentrated in a few modes, spaced by several multiples of the cavity free spectral range (FSR). This behavior reflects in a large correlation degree and, in principle, in an increased optical power per mode. In miniaturized quantum cascade lasers (QCLs), harmonic frequency combs (HFCs) are hence particularly attracting to explore quantum correlation effects between adjacent harmonic modes, enabled by the inherently large gain media third-order χ (3) Kerr nonlinearity, even if controlled generation of stable HFCs of predefined order, is typically demanding in such electrically pumped sources. Here, we demonstrate stable 2 nd order and 3 rd order HFC emission in terahertz frequency QCLs by respectively patterning an individual or a couple of equally spaced distributed multilayer graphene absorbers on the top metallic waveguides., Competing Interests: Conflict of interest: Authors state no conflict of interest regarding this article., (© 2024 the author(s), published by De Gruyter, Berlin/Boston.)

We experimentally and computationally investigate the magneto-conductance across the radial heterojunction of InAs-GaSb core-shell nanowires under a magnetic field, B , up to 30 T and at temperatures in the range 4.2-200 K. The observed double-peak negative differential conductance markedly blue-shifts with increasing B . The doublet accounts for spin-polarized currents through the Zeeman split channels of the InAs (GaSb) conduction (valence) band and exhibits strong anisotropy with respect to B orientation and marked temperature dependence. Envelope function approximation and a semiclassical (WKB) approach allow to compute the magnetic quantum states of InAs and GaSb sections of the nanowire and to estimate the B -dependent tunneling current across the broken-gap interface. Disentangling different magneto-transport channels and a thermally activated valence-to-valence band transport current, we extract the g -factor from the spin-up and spin-down d I /d V branch dispersion, revealing a giant, strongly anisotropic g -factor in excess of 60 (100) for the radial (tilted) field configurations.