Search

We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show that charge carriers belonging to different valleys propagate to different sides of the light spot upon photoexcitation. Importantly, in this low-energy regime, inter-valley electron-phonon scattering is suppressed, thereby protecting the valley index. This optically induced valley polarisation can be further enhanced via momentum alignment associated with linearly-polarised light. We then consider gapped bilayer graphene (for example with the gap induced by external top- and back-gates) and show that it exhibits valley-dependent optical selection rules with circularly-polarised light analogous to other gapped Dirac materials, such as transition metal dichalcogenides. Consequently, gapped bilayer graphene can be exploited to optically detect valley polarisation. Thus, we predict an optical valley Hall effect - the emission of two different circular polarisations from different sides of the light spot, upon linearly-polarised excitation. We also propose two realistic experimental setups in gapless and gapped bilayer graphene as a basis for novel optovalleytronic devices operating in the elusive terahertz regime., Comment: 9 pages, 7 figures

We show that the (2+1)-dimensional massless Dirac equation, which includes a tilt term, can be reduced to the biconfluent Heun equation for a broad range of scalar confining potentials, including the well-known Morse potential. Applying these solutions, we investigate a bipolar electron waveguide in 8-$Pmmn$ borophene, formed by a well and barrier, both described by the Morse potential. We demonstrate that the ability of two-dimensional materials with tilted Dirac cones to localize electrons in both a barrier and a well can be harnessed to create pseudogaps in their electronic spectrum. These pseudogaps can be tuned through varying the applied top-gate voltage. Potential opto-valleytronic and terahertz applications are discussed., Comment: 13 Pages, 3 figures

Well-known Mott's formula links the thermoelectric power characterised by Seebeck coefficient to conductivity. We calculate analytically the thermoelectric current and Seebeck coefficient in one-dimensional systems and show that, while the prediction of Mott's formula is valid for Dirac fermions, it is misleading for the carriers having a parabolic dispersion. We apply the developed formalism to metallic single wall carbon nanotubes and obtain a non-trivial non-monotonic dependence of the Seebeck coefficient on the chemical potential. We emphasize that, in contrast to Mott's formula, the classical Kelvin's formula that links thermoelectric power to the temperature derivative of the chemical potential is perfectly valid in carbon nanotubes in the ballistic regime. Interestingly, however, the Kelvin's formula fails in two- and three-dimensional systems in the ballistic regime., Comment: Accepted version